| No. |
Part Name |
Description |
Manufacturer |
| 3781 |
Q62702-F1665 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 3782 |
Q62702-F1771 |
Silicon N Channel MOSFET Tetrode |
Siemens |
| 3783 |
Q62702-F1772 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 3784 |
Q62702-F1773 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 3785 |
Q62702-F1774 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 3786 |
Q62702-F1775 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 3787 |
Q62702-F1776 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 3788 |
Q62702-F35 |
SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
Siemens |
| 3789 |
Q62702-F936 |
Silicon N Channel MOSFET Tetrode (For input and mixer stages in FM and VHF TV tuners) |
Siemens |
| 3790 |
RFY220 |
N-Channel MOSFET in a Hermetically sealed to257AB Metal Package. |
SemeLAB |
| 3791 |
ROS01 |
p channel MOS transistor |
ICCE |
| 3792 |
ROS02 |
n-Channel MOS transistor |
ICCE |
| 3793 |
ROS05 |
Dual matched p-Channel MOS transistor |
ICCE |
| 3794 |
ROS104 |
p-Channel MOS transistor |
ICCE |
| 3795 |
S525 |
N-Channel MOS-Fieldeffect Triode/ Depletion Mode |
Vishay |
| 3796 |
S525T |
N-Channel MOS‐Fieldeffect Triode, Depletion Mode |
Vishay |
| 3797 |
S525TW |
N-Channel MOS‐Fieldeffect Triode, Depletion Mode |
Vishay |
| 3798 |
SD1900 |
2-400MHz 5W 28V HF/VHF/UHF N-Channel MOSFET |
SGS Thomson Microelectronics |
| 3799 |
SD1900-1 |
2-400MHz 5W 28V HF/VHF/UHF N-Channel MOSFET |
SGS Thomson Microelectronics |
| 3800 |
SD1902 |
2-400MHz 15W 28V HF/VHF/UHF N-Channel MOSFET |
SGS Thomson Microelectronics |
| 3801 |
SD1902-1 |
2-400MHz 15W 28V HF/VHF/UHF N-Channel MOSFET |
SGS Thomson Microelectronics |
| 3802 |
SD1904 |
2-400MHz 30W 28V HF/VHF/UHF N-Channel MOSFET |
SGS Thomson Microelectronics |
| 3803 |
SD1904-1 |
2-400MHz 30W 28V HF/VHF/UHF N-Channel MOSFET |
SGS Thomson Microelectronics |
| 3804 |
SD1905 |
2-200MHz 45W 28V HF/VHF N-Channel MOSFET |
SGS Thomson Microelectronics |
| 3805 |
SD1908-1 |
2-200MHz 120W 28V HF/VHF N-Channel MOSFET |
SGS Thomson Microelectronics |
| 3806 |
SD1920-02 |
Gold metalliezed N-Channel MOS field-effect RF power transistor 50V, up to 200MHz 300W Class AB |
SGS Thomson Microelectronics |
| 3807 |
SD1930 |
Gold metallized N-Channel MOS field-effect RF transistor 28V 400MHz 5W |
SGS Thomson Microelectronics |
| 3808 |
SD2900 |
RF POWER TRANSISTORS, HF/VHF/UHF N-CHANNEL MOSFETs |
SGS Thomson Microelectronics |
| 3809 |
SD2900 |
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS |
ST Microelectronics |
| 3810 |
SD2902 |
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs |
SGS Thomson Microelectronics |
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