| No. |
Part Name |
Description |
Manufacturer |
| 3811 |
EL-303 |
Infrared Emitting Diodes(GaAs) |
Kondenshi Corp |
| 3812 |
EL-305 |
Infrared Emitting Diodes(GaAs) |
Kondenshi Corp |
| 3813 |
EL-313 |
Infrared Emitting Diodes(GaAs) |
Kondenshi Corp |
| 3814 |
EL-314 |
Infrared Emitting Diodes(GaAs) |
Kondenshi Corp |
| 3815 |
EL-315 |
Infrared Emitting Diodes(GaAs) |
Kondenshi Corp |
| 3816 |
EL-316 |
Infrared Emitting Diodes(GaAs) |
Kondenshi Corp |
| 3817 |
EL-325 |
Infrared Emitting Diodes(GaAs) |
Kondenshi Corp |
| 3818 |
EL-55L |
Infrared Emitting Diodes(GaAs) |
Kondenshi Corp |
| 3819 |
EL-6F11 |
Infrared Emitting Diodes(GaAs) |
Kondenshi Corp |
| 3820 |
EL1CL3 |
INFRARED EMITTING DIODES (GAAS) |
Kodenshi Corp |
| 3821 |
EL1KL3 |
INFRARED EMITTING DIODES |
Kondenshi Corp |
| 3822 |
EL23G |
Infrared Emitting Diodes(GaAs) |
Kodenshi Corp |
| 3823 |
EL23G |
Infrared Emitting Diodes(GaAs) |
Kondenshi Corp |
| 3824 |
EM-1681 |
Hall IC / Pole Independent |
Asahi Kasei Microsystems |
| 3825 |
F-ZTAT |
F-ZTAT Microcomputer On-Board Writing Program, User's Manual |
Hitachi Semiconductor |
| 3826 |
F-ZTAT |
F-ZTAT Microcomputer On-Board Programming, Application Note |
Hitachi Semiconductor |
| 3827 |
FA01215 |
GaAs FET HYBRID IC |
Mitsubishi Electric Corporation |
| 3828 |
FA01219A |
GaAs FET HYBRID IC |
Mitsubishi Electric Corporation |
| 3829 |
FA01220A |
GaAs FET HYBRID IC |
Mitsubishi Electric Corporation |
| 3830 |
FA01384 |
GaAs FET HYBRID IC |
Mitsubishi Electric Corporation |
| 3831 |
FA4105A |
V(cc): 90V; BW: 150MHz; tr: 2.5ns; I(cc): 25mA; video amplifier module EV-board. MODEL: VAM-EV1 |
Hitachi Semiconductor |
| 3832 |
FA4111 |
V(cc): 100V BW: 120MHz tr: 3.6ns I(cc): 40mA video amplifier module EV-board. MODEL: VAM-EV1 |
Hitachi Semiconductor |
| 3833 |
FA4111B |
V(cc): 100V; BW: 140MHz; tr: 3.2ns; I(cc): 42mA; video amplifier module EV-board. MODEL: VAM-EV1 |
Hitachi Semiconductor |
| 3834 |
FA4113 |
V(cc): 100V; BW: 150MHz; tr: 3.0ns; I(cc): 45mA; video amplifier module EV-board. MODEL: VAM-EV1 |
Hitachi Semiconductor |
| 3835 |
FAO1384 |
GaAs FET HYBRID IC |
Mitsubishi Electric Corporation |
| 3836 |
FD1000FH-56 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE |
Mitsubishi Electric Corporation |
| 3837 |
FD1000FH-56 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE |
Mitsubishi Electric Corporation |
| 3838 |
FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE |
Mitsubishi Electric Corporation |
| 3839 |
FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE |
Mitsubishi Electric Corporation |
| 3840 |
FD1000FX-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE |
Mitsubishi Electric Corporation |
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