| No. |
Part Name |
Description |
Manufacturer |
| 3871 |
2SB75AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 3872 |
2SB75H |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 3873 |
2SB77 |
GERMANIUM PNP ALLOYED JUNCTION (LOW SPEED SWITCHING AUDIO FREQUENCY POWER OUTPUT) |
Unknow |
| 3874 |
2SB772 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |
Unisonic Technologies |
| 3875 |
2SB772S |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |
Unisonic Technologies |
| 3876 |
2SB805-T1 |
Low frequency power amplification |
NEC |
| 3877 |
2SB805-T2 |
Low frequency power amplification |
NEC |
| 3878 |
2SB825 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 3879 |
2SB834 |
Power transistor for low frequency applications |
TOSHIBA |
| 3880 |
2SB834 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 3881 |
2SB856 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 3882 |
2SB94 |
Low Frequency Small-Signal Transistor |
TOSHIBA |
| 3883 |
2SC1000 |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
| 3884 |
2SC1000G |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
| 3885 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 3886 |
2SC105 |
Low Frequency Low-Level Transistor |
TOSHIBA |
| 3887 |
2SC1060 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SA670 and 2SA671 |
Unknow |
| 3888 |
2SC1060 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SA670 and 2SA671 |
Unknow |
| 3889 |
2SC1061 |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 3890 |
2SC1096 |
NPN silicon transistor for audio frequency and low speed switching applications |
NEC |
| 3891 |
2SC1120 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
| 3892 |
2SC1121 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
| 3893 |
2SC1122A |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio Output Stage applications (low supply voltage use) |
TOSHIBA |
| 3894 |
2SC1199 |
Silicon NPN epitaxial planar high frequency low noise transistor |
TOSHIBA |
| 3895 |
2SC1213AB |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 3896 |
2SC1213AB |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
| 3897 |
2SC1213AC |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 3898 |
2SC1213AC |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
| 3899 |
2SC1213AD |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 3900 |
2SC1213AD |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
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