| No. |
Part Name |
Description |
Manufacturer |
| 3961 |
2SC2954-T1 |
For amplify high frequency, low noise, and wide band. |
NEC |
| 3962 |
2SC2954-T2 |
For amplify high frequency, low noise, and wide band. |
NEC |
| 3963 |
2SC3011 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 3964 |
2SC3052 |
LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 3965 |
2SC3098 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 3966 |
2SC3099 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 3967 |
2SC3265 |
Transistor Silicon NPN Epitaxial Type (PCT process) Low Frequency Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 3968 |
2SC3268 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 3969 |
2SC3302 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION |
TOSHIBA |
| 3970 |
2SC3324 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 3971 |
2SC3325 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 3972 |
2SC3329 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers |
TOSHIBA |
| 3973 |
2SC3351-L |
For amplify low noise and high frequency. |
NEC |
| 3974 |
2SC3351-T1B |
For amplify low noise and high frequency. |
NEC |
| 3975 |
2SC3351-T2B |
For amplify low noise and high frequency. |
NEC |
| 3976 |
2SC3355 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 3977 |
2SC3355-T |
For amplify low noise and high frequency |
NEC |
| 3978 |
2SC3356 |
MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) |
NEC |
| 3979 |
2SC3356-L |
For amplify low noise and high frequency |
NEC |
| 3980 |
2SC3356-T1B |
For amplify low noise and high frequency |
NEC |
| 3981 |
2SC3356-T2B |
For amplify low noise and high frequency |
NEC |
| 3982 |
2SC3356-VM |
For amplify low noise and high frequency |
NEC |
| 3983 |
2SC3357-T1 |
For amplify high frequency and low noise. |
NEC |
| 3984 |
2SC3357-T2 |
For amplify high frequency and low noise. |
NEC |
| 3985 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
| 3986 |
2SC3422 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING |
TOSHIBA |
| 3987 |
2SC3429 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 3988 |
2SC3444 |
FOR LOW FREQUENCY POWER AMPLFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 3989 |
2SC3582 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 3990 |
2SC3582-T |
For amplify microwave and low noise. |
NEC |
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