| No. |
Part Name |
Description |
Manufacturer |
| 391 |
2N6487 |
15A complementary silicon plastic 75W power NPN transistor |
Motorola |
| 392 |
2N6488 |
75.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
| 393 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
| 394 |
2N6488 |
15A complementary silicon plastic 75W power NPN transistor |
Motorola |
| 395 |
2N6489 |
75.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
| 396 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
| 397 |
2N6489 |
15A complementary silicon plastic 75W power PNP transistor |
Motorola |
| 398 |
2N6490 |
75.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
| 399 |
2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. |
General Electric Solid State |
| 400 |
2N6490 |
15A complementary silicon plastic 75W power PNP transistor |
Motorola |
| 401 |
2N6491 |
75.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
| 402 |
2N6491 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. |
General Electric Solid State |
| 403 |
2N6491 |
15A complementary silicon plastic 75W power PNP transistor |
Motorola |
| 404 |
2N682 |
25A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
| 405 |
2SC2166 |
Trans GP BJT NPN 75V 4A 3-Pin(3+Tab) T-30 |
New Jersey Semiconductor |
| 406 |
2SK4065 |
N-Channel Power MOSFET, 75V, 100A, 6mOhm, TO-263-2L |
ON Semiconductor |
| 407 |
2V480 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 750 V @ 1mA DC test current. |
NTE Electronics |
| 408 |
30KP75 |
Diode TVS Single Uni-Dir 75V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 409 |
30KP75A |
Diode TVS Single Uni-Dir 75V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 410 |
30KP75C |
Diode TVS Single Bi-Dir 75V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 411 |
30KP75CA |
Diode TVS Single Bi-Dir 75V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 412 |
30KPA75 |
Diode TVS Single Uni-Dir 75V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 413 |
30KPA75A |
Diode TVS Single Uni-Dir 75V 30KW 2-Pin |
New Jersey Semiconductor |
| 414 |
30KPA75C |
Diode TVS Single Bi-Dir 75V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 415 |
30KPA75CA |
Diode TVS Single Bi-Dir 75V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 416 |
3D7205-75 |
Delay 75 +/-7.5 ns, monolithic 5-TAP fixed delay line |
Data Delay Devices Inc |
| 417 |
3D7205G-75 |
Delay 75 +/-7.5 ns, monolithic 5-TAP fixed delay line |
Data Delay Devices Inc |
| 418 |
3D7205H-75 |
Delay 75 +/-7.5 ns, monolithic 5-TAP fixed delay line |
Data Delay Devices Inc |
| 419 |
3D7205K-75 |
Delay 75 +/-7.5 ns, monolithic 5-TAP fixed delay line |
Data Delay Devices Inc |
| 420 |
3D7205M-75 |
Delay 75 +/-7.5 ns, monolithic 5-TAP fixed delay line |
Data Delay Devices Inc |
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