| No. |
Part Name |
Description |
Manufacturer |
| 451 |
5962R3829436SNA |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish solder. |
Aeroflex Circuit Technology |
| 452 |
5962R3829436SNC |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish gold. |
Aeroflex Circuit Technology |
| 453 |
5962R3829436SNX |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish optional. |
Aeroflex Circuit Technology |
| 454 |
5962R3829436SXA |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish solder. |
Aeroflex Circuit Technology |
| 455 |
5962R3829436SXC |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish gold. |
Aeroflex Circuit Technology |
| 456 |
5962R3829436SXX |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish optional. |
Aeroflex Circuit Technology |
| 457 |
5KP75 |
Diode TVS Single Uni-Dir 75V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 458 |
5KP75A |
Diode TVS Single Uni-Dir 75V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 459 |
5KP75C |
Diode TVS Single Bi-Dir 75V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 460 |
5KP75CA |
Diode TVS Single Bi-Dir 75V 5KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 461 |
610 |
Pentium processor at iCOMP 610, fractional bus operation - 75-MHz core / 50-MHz bus |
Intel |
| 462 |
6MBI75F-060 |
IGBT(600V 75A) |
Fuji Electric |
| 463 |
70511 |
N-Channel 75-V (D-S) 200C MOSFET |
Vishay |
| 464 |
75HQ035 |
35V 75A Schottky Discrete Diode in a DO-203AB (DO-5) package |
International Rectifier |
| 465 |
75HQ040 |
40V 75A Schottky Discrete Diode in a DO-203AB (DO-5) package |
International Rectifier |
| 466 |
75HQ045 |
45V 75A Schottky Discrete Diode in a DO-203AB (DO-5) package |
International Rectifier |
| 467 |
80610-50 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
| 468 |
8483A |
8483A Power Sensor, 100 kHz to 2 GHz, 75 ohm |
Agilent (Hewlett-Packard) |
| 469 |
86207A |
86207A RF Bridge, 75 Ohm, 300 kHz to 3 GHz |
Agilent (Hewlett-Packard) |
| 470 |
9000 |
Marking for NE900075 part number, 75 NEC package |
NEC |
| 471 |
9001 |
Marking for NE900175 part number, 75 NEC package |
NEC |
| 472 |
9002 |
Marking for NE900275 part number, 75 NEC package |
NEC |
| 473 |
A610 |
Pentium processor at iCOMP 610, fractional bus operation - 75-MHz core / 50-MHz bus |
Intel |
| 474 |
A7660FS |
3-channel 75�� driver |
ROHM |
| 475 |
AD6622AS |
Four-Channel, 75 MSPS Digital Transmit Signal Processor TSP |
Analog Devices |
| 476 |
AD6622PCB |
Four-Channel, 75 MSPS Digital Transmit Signal Processor TSP |
Analog Devices |
| 477 |
AD6622S |
Four-Channel, 75 MSPS Digital Transmit Signal Processor TSP |
Analog Devices |
| 478 |
AD6622S/PCB |
Four-Channel, 75 MSPS Digital Transmit Signal Processor TSP |
Analog Devices |
| 479 |
AD7612 |
16-Bit, 750 kSPS, Unipolar/Bipolar Programmable Input PulSAR® ADC |
Analog Devices |
| 480 |
AD7886 |
LC2MOS 12-Bit, 750 kHz/1 MHz, Sampling ADC |
Analog Devices |
| | | |
