| No. |
Part Name |
Description |
Manufacturer |
| 391 |
2SA282 |
High-Speed Switching Transistor |
TOSHIBA |
| 392 |
2SA283 |
High-Speed Switching Transistor |
TOSHIBA |
| 393 |
2SA284 |
High-Speed Switching Transistor |
TOSHIBA |
| 394 |
2SA311 |
High-Speed Switching Transistor |
TOSHIBA |
| 395 |
2SA312 |
High-Speed Switching Transistor |
TOSHIBA |
| 396 |
2SA372 |
High-Speed Switching Transistor |
TOSHIBA |
| 397 |
2SA446 |
High-Speed Switching Transistor |
TOSHIBA |
| 398 |
2SA495G |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 399 |
2SA499 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 400 |
2SA50 |
High-Speed Switching Transistor |
TOSHIBA |
| 401 |
2SA500 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 402 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 403 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 404 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 405 |
2SA549AH |
Silicon PNP Triple Diffused Planar Transistor, intended for use in High Speed Switching, Indicater Tube Driver |
Hitachi Semiconductor |
| 406 |
2SA634 |
PNP silicon transistor for audio frequency and low speed switching applications |
NEC |
| 407 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
| 408 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
| 409 |
2SA78 |
High-Speed Switching Transistor |
TOSHIBA |
| 410 |
2SB1108 |
Medium Speed Switching Complementary Pair with 2SD1608 |
Panasonic |
| 411 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 412 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 413 |
2SB1142 |
PNP Epitaxial Planar Silicon Transistors 50V/2.5A High-Speed Switching Applications |
SANYO |
| 414 |
2SB1285 |
Low-speed switching Darlington transistor |
Shindengen |
| 415 |
2SB1448 |
Low-speed switching Darlington transistor |
Shindengen |
| 416 |
2SB1468 |
PNP Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications |
SANYO |
| 417 |
2SB150 |
Low-Speed Switching Transistor |
TOSHIBA |
| 418 |
2SB1578 |
Low freq. power amp., medium-speed switching transistor |
NEC |
| 419 |
2SB201 |
Low-Speed Switching Transistor |
TOSHIBA |
| 420 |
2SB265 |
Low-Speed Switching Transistor |
TOSHIBA |
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