| No. |
Part Name |
Description |
Manufacturer |
| 421 |
2SB370AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, Low Speed Switching |
Hitachi Semiconductor |
| 422 |
2SB40 |
Low-Speed Switching Transistor |
TOSHIBA |
| 423 |
2SB424 |
Low-Speed Switching Transistor |
TOSHIBA |
| 424 |
2SB536 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 425 |
2SB536 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 426 |
2SB537 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 427 |
2SB537 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 428 |
2SB559 |
Low Frequency Power Amp, Medium Speed Switching Applications |
Unknow |
| 429 |
2SB628 |
Silicon epitaxial transistor, audio frequency power amplifier and low speed switching |
NEC |
| 430 |
2SB678 |
Silicon PNP epitaxial darlington medium power low frequency, medium speed switching transistor |
TOSHIBA |
| 431 |
2SB731 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 432 |
2SB75AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 433 |
2SB75H |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 434 |
2SB77 |
GERMANIUM PNP ALLOYED JUNCTION (LOW SPEED SWITCHING AUDIO FREQUENCY POWER OUTPUT) |
Unknow |
| 435 |
2SB903 |
30V/12A High-Speed Switching Applications |
SANYO |
| 436 |
2SB904 |
PNP Epitaxial Planar Silicon Transistors 30V/12A High-Speed Switching Applications |
SANYO |
| 437 |
2SB919 |
PNP Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications |
SANYO |
| 438 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 439 |
2SC103A |
High-Speed Switching Transistor |
TOSHIBA |
| 440 |
2SC106 |
High-Speed Switching Transistor |
TOSHIBA |
| 441 |
2SC107 |
High-Speed Switching Transistor |
TOSHIBA |
| 442 |
2SC108 |
High-Speed Switching Transistor |
TOSHIBA |
| 443 |
2SC109 |
High-Speed Switching Transistor |
TOSHIBA |
| 444 |
2SC1096 |
NPN silicon transistor for audio frequency and low speed switching applications |
NEC |
| 445 |
2SC13 |
High-Speed Switching Transistor |
TOSHIBA |
| 446 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
| 447 |
2SC14 |
High-Speed Switching Transistor |
TOSHIBA |
| 448 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 449 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 450 |
2SC1621 |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
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