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Datasheets for NPN E

Datasheets found :: 4834
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No. Part Name Description Manufacturer
391 2SC281 Silicon NPN Epitaxial LTP Transistor Vcbo=30V, Pc=200mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output Hitachi Semiconductor
392 2SC2814 NPN Epitaxial Planar Silicon Transistor High-Friquency General-Purpose Amplifier Applications SANYO
393 2SC281H Silicon NPN Epitaxial LTP Transistor, intended for use in Audio Frequency Small Signal Amplifier Hitachi Semiconductor
394 2SC2824 SILICON NPN EPITAXIAL TYPE(PCT PROCESS) TOSHIBA
395 2SC282H Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching Hitachi Semiconductor
396 2SC283 Silicon NPN Epitaxial LTP Transistor Vcbo=50V, Pc=350mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output Hitachi Semiconductor
397 2SC2839 NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications SANYO
398 2SC283H Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier Hitachi Semiconductor
399 2SC2840 NPN Epitaxial Planar Type Silicon Transistor SANYO
400 2SC2845 SILICON NPN EPITAXIAL PLANAR Panasonic
401 2SC284H Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching Hitachi Semiconductor
402 2SC2853 Silicon NPN Epitaxial Hitachi Semiconductor
403 2SC2854 Silicon NPN Epitaxial Hitachi Semiconductor
404 2SC2855 Silicon NPN Epitaxial Hitachi Semiconductor
405 2SC2856 Silicon NPN Epitaxial Hitachi Semiconductor
406 2SC2859 Transistor Silicon NPN Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications TOSHIBA
407 2SC2860 Si NPN Epitaxial Planar Panasonic
408 2SC2877 Silicon NPN epitaxial planar audio frequency power transistor TOSHIBA
409 2SC2878 Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications TOSHIBA
410 2SC2879 TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) TOSHIBA
411 2SC2881 Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier Applications TOSHIBA
412 2SC2882 Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier Applications TOSHIBA
413 2SC2883 TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS TOSHIBA
414 2SC2884 TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS TOSHIBA
415 2SC2904 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
416 2SC2905 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
417 2SC2909 NPN Epitaxial Planar Silicon Transistors High-Voltage Switching AF 60W Predriver Applications SANYO
418 2SC2910 NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Audio 80W Output Predriver Applications SANYO
419 2SC2911 NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications SANYO
420 2SC2932 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation


Datasheets found :: 4834
Page: | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 |



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