DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for NPN E

Datasheets found :: 4834
Page: | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 |
No. Part Name Description Manufacturer
421 2SC2933 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
422 2SC2960 NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications SANYO
423 2SC2982 Transistor Silicon NPN Epitaxial Type (PCT process) Storobo Flash Applications Medium Power Amplifier Applications TOSHIBA
424 2SC2983 Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications TOSHIBA
425 2SC2995 Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, OSC, IF High Frequency Amplifier Applications TOSHIBA
426 2SC2996 Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, Local, IF High Frequency Amplifier Applications TOSHIBA
427 2SC2999 NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications SANYO
428 2SC3000 NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications SANYO
429 2SC3001 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
430 2SC3007 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TOSHIBA
431 2SC3011 Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications TOSHIBA
432 2SC3017 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
433 2SC3018 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
434 2SC3019 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
435 2SC3020 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
436 2SC3021 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
437 2SC3022 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Mitsubishi Electric Corporation
438 2SC3052 LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Isahaya Electronics Corporation
439 2SC3064 NPN Epitaxial Planar Silicon CompositeTransistor SANYO
440 2SC3065 NPN Epitaxial Planar Silicon CompositeTransistor SANYO
441 2SC3067 NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONS SANYO
442 2SC3068 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications SANYO
443 2SC3069 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications SANYO
444 2SC3070 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications SANYO
445 2SC3071 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications SANYO
446 2SC3072 Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications TOSHIBA
447 2SC3073 SILICON NPN EPITAXIAL TYPE(PCT PROCESS) TOSHIBA
448 2SC3074 Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications TOSHIBA
449 2SC3076 Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications TOSHIBA
450 2SC3098 Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications TOSHIBA


Datasheets found :: 4834
Page: | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 |



© 2024 - www Datasheet Catalog com