DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for SIGNE

Datasheets found :: 4309
Page: | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 |
No. Part Name Description Manufacturer
391 2N1893 NPN silicon annular transistor designed for medium-power applications Motorola
392 2N1990 NPN silicon transistor designed for driving neon display tubes Motorola
393 2N2224 NPN silicon annular transistor designed primarly for high speed switching applications Motorola
394 2N2242 NPN silicon annular transistor designed for high-speed, low-power saturated switching applications Motorola
395 2N2273 High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications Motorola
396 2N2322 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
397 2N2323 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
398 2N2324 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
399 2N2325 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
400 2N2326 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
401 2N2405 NPN silicon annular transistor designed for medium-power applications Motorola
402 2N2453 Dual NPN silicon transistor designed for differential amplifier applications Motorola
403 2N2453A Dual NPN silicon transistor designed for differential amplifier applications Motorola
404 2N2639 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
405 2N2640 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
406 2N2641 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
407 2N2642 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
408 2N2643 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
409 2N2644 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
410 2N2646 Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits Motorola
411 2N2647 Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits Motorola
412 2N2728 PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries Motorola
413 2N2802 Dual PNP silicon annular transistors designed for differential applications Motorola
414 2N2803 Dual PNP silicon annular transistors designed for differential applications Motorola
415 2N2804 Dual PNP silicon annular transistors designed for differential applications Motorola
416 2N2805 Dual PNP silicon annular transistors designed for differential applications Motorola
417 2N2806 Dual PNP silicon annular transistors designed for differential applications Motorola
418 2N2807 Dual PNP silicon annular transistors designed for differential applications Motorola
419 2N2845 NPN silicon annular transistor designed for switching applications Motorola
420 2N2846 NPN silicon annular transistor designed for switching applications Motorola


Datasheets found :: 4309
Page: | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 |



© 2024 - www Datasheet Catalog com