No. |
Part Name |
Description |
Manufacturer |
391 |
2N1893 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
392 |
2N1990 |
NPN silicon transistor designed for driving neon display tubes |
Motorola |
393 |
2N2224 |
NPN silicon annular transistor designed primarly for high speed switching applications |
Motorola |
394 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
395 |
2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
396 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
397 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
398 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
399 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
400 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
401 |
2N2405 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
402 |
2N2453 |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
403 |
2N2453A |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
404 |
2N2639 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
405 |
2N2640 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
406 |
2N2641 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
407 |
2N2642 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
408 |
2N2643 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
409 |
2N2644 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
410 |
2N2646 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
411 |
2N2647 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
412 |
2N2728 |
PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries |
Motorola |
413 |
2N2802 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
414 |
2N2803 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
415 |
2N2804 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
416 |
2N2805 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
417 |
2N2806 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
418 |
2N2807 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
419 |
2N2845 |
NPN silicon annular transistor designed for switching applications |
Motorola |
420 |
2N2846 |
NPN silicon annular transistor designed for switching applications |
Motorola |
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