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Datasheets for SIGNE

Datasheets found :: 4328
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No. Part Name Description Manufacturer
511 2N4199 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
512 2N4200 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
513 2N4201 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
514 2N4202 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
515 2N4203 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
516 2N4204 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
517 2N4212 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
518 2N4213 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
519 2N4214 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
520 2N4215 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
521 2N4216 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
522 2N4223 Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications Motorola
523 2N4224 Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications Motorola
524 2N4248 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
525 2N4249 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
526 2N4250 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
527 2N4250A Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
528 2N4264 NPN silicon transistor designed for low-level, saturated logic applications Motorola
529 2N4265 NPN silicon transistor designed for low-level, saturated logic applications Motorola
530 2N4409 NPN silicon epitaxial transistor, designed for driving neon display tubes Motorola
531 2N4410 NPN silicon epitaxial transistor, designed for driving neon display tubes Motorola
532 2N4416 Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications Motorola
533 2N4427 Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications SGS-ATES
534 2N4428 Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications SGS-ATES
535 2N4441 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
536 2N4442 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
537 2N4443 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
538 2N4444 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
539 2N4924 NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications Motorola
540 2N4925 NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications Motorola


Datasheets found :: 4328
Page: | 14 | 15 | 16 | 17 | 18 | 19 | 20 | 21 | 22 |



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