| No. |
Part Name |
Description |
Manufacturer |
| 3991 |
IRF611 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 3992 |
IRF611 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 2.5A |
Siliconix |
| 3993 |
IRF612 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 3994 |
IRF612 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 2A |
Siliconix |
| 3995 |
IRF613 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 3996 |
IRF613 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 2A |
Siliconix |
| 3997 |
IRF620 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 3998 |
IRF620 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 3999 |
IRF620 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 4000 |
IRF620 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 5A |
Siliconix |
| 4001 |
IRF620FI |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 4002 |
IRF620FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 4003 |
IRF621 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 4004 |
IRF621 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 5A |
Siliconix |
| 4005 |
IRF622 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 4006 |
IRF622 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 4A |
Siliconix |
| 4007 |
IRF623 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 4008 |
IRF623 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 4A |
Siliconix |
| 4009 |
IRF630 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 4010 |
IRF630 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A |
Siliconix |
| 4011 |
IRF631 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 4012 |
IRF631 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 9A |
Siliconix |
| 4013 |
IRF632 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 4014 |
IRF632 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 8A |
Siliconix |
| 4015 |
IRF633 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 4016 |
IRF633 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 8A |
Siliconix |
| 4017 |
IRF640 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 18A |
Siliconix |
| 4018 |
IRF640-D |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 4019 |
IRF641 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. |
General Electric Solid State |
| 4020 |
IRF641 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 18A |
Siliconix |
| | | |
