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Datasheets for ENHANCE

Datasheets found :: 11470
Page: | 131 | 132 | 133 | 134 | 135 | 136 | 137 | 138 | 139 |
No. Part Name Description Manufacturer
4021 IRF642 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. General Electric Solid State
4022 IRF642 MOSPOWER N-Channel Enhancement Mode Transistor 200V 16A Siliconix
4023 IRF643 MOSPOWER N-Channel Enhancement Mode Transistor 150V 16A Siliconix
4024 IRF710 MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.5A Siliconix
4025 IRF711 MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A Siliconix
4026 IRF712 MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.5A Siliconix
4027 IRF713 MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A Siliconix
4028 IRF720 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. General Electric Solid State
4029 IRF720 MOSPOWER N-Channel Enhancement Mode Transistor 400V 3A Siliconix
4030 IRF721 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. General Electric Solid State
4031 IRF721 MOSPOWER N-Channel Enhancement Mode Transistor 350V 3A Siliconix
4032 IRF722 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
4033 IRF722 MOSPOWER N-Channel Enhancement Mode Transistor 400V 2.5A Siliconix
4034 IRF723 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
4035 IRF723 MOSPOWER N-Channel Enhancement Mode Transistor 350V 2.5A Siliconix
4036 IRF730 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
4037 IRF730 MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A Siliconix
4038 IRF731 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
4039 IRF731 MOSPOWER N-Channel Enhancement Mode Transistor 350V 5.5A Siliconix
4040 IRF732 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
4041 IRF732 MOSPOWER N-Channel Enhancement Mode Transistor 400V 4.5A Siliconix
4042 IRF733 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
4043 IRF733 MOSPOWER N-Channel Enhancement Mode Transistor 350V 4.5A Siliconix
4044 IRF740 MOSPOWER N-Channel Enhancement Mode Transistor 400V 10A Siliconix
4045 IRF741 MOSPOWER N-Channel Enhancement Mode Transistor 350V 10A Siliconix
4046 IRF742 MOSPOWER N-Channel Enhancement Mode Transistor 400V 8.0A Siliconix
4047 IRF743 MOSPOWER N-Channel Enhancement Mode Transistor 350V 8.0A Siliconix
4048 IRF82 N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS ST Microelectronics
4049 IRF820 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
4050 IRF820 N-CHANNEL Enhancement-Mode Silicon Gate TMOS Motorola


Datasheets found :: 11470
Page: | 131 | 132 | 133 | 134 | 135 | 136 | 137 | 138 | 139 |



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