No. |
Part Name |
Description |
Manufacturer |
4081 |
2N6058 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
4082 |
2N6059 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
4083 |
2N6076 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
4084 |
2N6076 |
PNP silicon transistor. 25V, 100mA. |
General Electric Solid State |
4085 |
2N6077 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
4086 |
2N6078 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
4087 |
2N6079 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
4088 |
2N6099 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4089 |
2N6099 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
4090 |
2N6101 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4091 |
2N6101 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
4092 |
2N6103 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4093 |
2N6106 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
4094 |
2N6107 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4095 |
2N6107 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
4096 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
4097 |
2N6108 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
4098 |
2N6109 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4099 |
2N6109 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
4100 |
2N6110 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
4101 |
2N6111 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4102 |
2N6111 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
4103 |
2N6121 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4104 |
2N6121 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. |
General Electric Solid State |
4105 |
2N6122 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4106 |
2N6122 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
4107 |
2N6123 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4108 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
4109 |
2N6124 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4110 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
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