No. |
Part Name |
Description |
Manufacturer |
4141 |
2N6251 |
450V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
4142 |
2N6253 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4143 |
2N6253 |
High-power silicon N-P-N transistor. 55V, 115W. |
General Electric Solid State |
4144 |
2N6253 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
4145 |
2N6254 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4146 |
2N6254 |
High-power silicon N-P-N transistor. 100V, 150W. |
General Electric Solid State |
4147 |
2N6254 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
4148 |
2N6257 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
4149 |
2N6258 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
4150 |
2N6259 |
High voltage, high power transistor. 170V, 250W. |
General Electric Solid State |
4151 |
2N6259 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
4152 |
2N6260 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4153 |
2N6261 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4154 |
2N6261 |
General Purpose NPN Transistor - metal case |
IPRS Baneasa |
4155 |
2N6262 |
High voltage silicon N-P-N transistor. 170V, 150W. |
General Electric Solid State |
4156 |
2N6262 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
4157 |
2N6263 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4158 |
2N6263 |
Medium power silicon N-P-N transistor. 140V, 20W. |
General Electric Solid State |
4159 |
2N6263 |
General Purpose NPN Transistor - metal case |
IPRS Baneasa |
4160 |
2N6264 |
Medium power silicon N-P-N transistor. 170V, 50W. |
General Electric Solid State |
4161 |
2N6264 |
General Purpose NPN Transistor - metal case |
IPRS Baneasa |
4162 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
4163 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
4164 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
4165 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
4166 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
4167 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
4168 |
2N6288 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4169 |
2N6288 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
4170 |
2N6289 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
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