DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for HANC

Datasheets found :: 11601
Page: | 133 | 134 | 135 | 136 | 137 | 138 | 139 | 140 | 141 |
No. Part Name Description Manufacturer
4081 IRF533FI N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ST Microelectronics
4082 IRF540 MOSPOWER N-Channel Enhancement Mode Transistor 100V 27A Siliconix
4083 IRF540-D TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate ON Semiconductor
4084 IRF541 MOSPOWER N-Channel Enhancement Mode Transistor 60V 27A Siliconix
4085 IRF542 MOSPOWER N-Channel Enhancement Mode Transistor 100V 24A Siliconix
4086 IRF543 MOSPOWER N-Channel Enhancement Mode Transistor 60V 24A Siliconix
4087 IRF610 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
4088 IRF610 MOSPOWER N-Channel Enhancement Mode Transistor 200V 2.5A Siliconix
4089 IRF611 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
4090 IRF611 MOSPOWER N-Channel Enhancement Mode Transistor 150V 2.5A Siliconix
4091 IRF612 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
4092 IRF612 MOSPOWER N-Channel Enhancement Mode Transistor 200V 2A Siliconix
4093 IRF613 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
4094 IRF613 MOSPOWER N-Channel Enhancement Mode Transistor 150V 2A Siliconix
4095 IRF620 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
4096 IRF620 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
4097 IRF620 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
4098 IRF620 MOSPOWER N-Channel Enhancement Mode Transistor 200V 5A Siliconix
4099 IRF620FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
4100 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
4101 IRF621 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
4102 IRF621 MOSPOWER N-Channel Enhancement Mode Transistor 150V 5A Siliconix
4103 IRF622 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
4104 IRF622 MOSPOWER N-Channel Enhancement Mode Transistor 200V 4A Siliconix
4105 IRF623 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
4106 IRF623 MOSPOWER N-Channel Enhancement Mode Transistor 150V 4A Siliconix
4107 IRF630 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
4108 IRF630 MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A Siliconix
4109 IRF631 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
4110 IRF631 MOSPOWER N-Channel Enhancement Mode Transistor 150V 9A Siliconix


Datasheets found :: 11601
Page: | 133 | 134 | 135 | 136 | 137 | 138 | 139 | 140 | 141 |



© 2024 - www Datasheet Catalog com