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Datasheets for HANC

Datasheets found :: 11601
Page: | 134 | 135 | 136 | 137 | 138 | 139 | 140 | 141 | 142 |
No. Part Name Description Manufacturer
4111 IRF632 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
4112 IRF632 MOSPOWER N-Channel Enhancement Mode Transistor 200V 8A Siliconix
4113 IRF633 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
4114 IRF633 MOSPOWER N-Channel Enhancement Mode Transistor 150V 8A Siliconix
4115 IRF640 MOSPOWER N-Channel Enhancement Mode Transistor 200V 18A Siliconix
4116 IRF640-D Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate ON Semiconductor
4117 IRF641 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. General Electric Solid State
4118 IRF641 MOSPOWER N-Channel Enhancement Mode Transistor 150V 18A Siliconix
4119 IRF642 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. General Electric Solid State
4120 IRF642 MOSPOWER N-Channel Enhancement Mode Transistor 200V 16A Siliconix
4121 IRF643 MOSPOWER N-Channel Enhancement Mode Transistor 150V 16A Siliconix
4122 IRF710 MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.5A Siliconix
4123 IRF711 MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A Siliconix
4124 IRF712 MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.5A Siliconix
4125 IRF713 MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A Siliconix
4126 IRF720 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. General Electric Solid State
4127 IRF720 MOSPOWER N-Channel Enhancement Mode Transistor 400V 3A Siliconix
4128 IRF721 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. General Electric Solid State
4129 IRF721 MOSPOWER N-Channel Enhancement Mode Transistor 350V 3A Siliconix
4130 IRF722 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
4131 IRF722 MOSPOWER N-Channel Enhancement Mode Transistor 400V 2.5A Siliconix
4132 IRF723 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
4133 IRF723 MOSPOWER N-Channel Enhancement Mode Transistor 350V 2.5A Siliconix
4134 IRF730 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
4135 IRF730 MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A Siliconix
4136 IRF731 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
4137 IRF731 MOSPOWER N-Channel Enhancement Mode Transistor 350V 5.5A Siliconix
4138 IRF732 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
4139 IRF732 MOSPOWER N-Channel Enhancement Mode Transistor 400V 4.5A Siliconix
4140 IRF733 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State


Datasheets found :: 11601
Page: | 134 | 135 | 136 | 137 | 138 | 139 | 140 | 141 | 142 |



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