No. |
Part Name |
Description |
Manufacturer |
4111 |
IRF632 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
4112 |
IRF632 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 8A |
Siliconix |
4113 |
IRF633 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
4114 |
IRF633 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 8A |
Siliconix |
4115 |
IRF640 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 18A |
Siliconix |
4116 |
IRF640-D |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
4117 |
IRF641 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. |
General Electric Solid State |
4118 |
IRF641 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 18A |
Siliconix |
4119 |
IRF642 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. |
General Electric Solid State |
4120 |
IRF642 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 16A |
Siliconix |
4121 |
IRF643 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 16A |
Siliconix |
4122 |
IRF710 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.5A |
Siliconix |
4123 |
IRF711 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A |
Siliconix |
4124 |
IRF712 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.5A |
Siliconix |
4125 |
IRF713 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A |
Siliconix |
4126 |
IRF720 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
4127 |
IRF720 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 3A |
Siliconix |
4128 |
IRF721 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
4129 |
IRF721 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 3A |
Siliconix |
4130 |
IRF722 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
4131 |
IRF722 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 2.5A |
Siliconix |
4132 |
IRF723 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
4133 |
IRF723 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 2.5A |
Siliconix |
4134 |
IRF730 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
4135 |
IRF730 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A |
Siliconix |
4136 |
IRF731 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
4137 |
IRF731 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 5.5A |
Siliconix |
4138 |
IRF732 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
4139 |
IRF732 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 4.5A |
Siliconix |
4140 |
IRF733 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
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