| No. |
Part Name |
Description |
Manufacturer |
| 4111 |
MG100N2YK1 |
TRANSISTOR MODULES |
etc |
| 4112 |
MG100N2YL1 |
TRANSISTOR MODULES |
etc |
| 4113 |
MHV12-0.5K6000N |
HV-Power Supplies |
Traco Electronic AG |
| 4114 |
MHV12-1.0K2000N |
HV-Power Supplies |
Traco Electronic AG |
| 4115 |
MHV12-1.5K1300N |
HV-Power Supplies |
Traco Electronic AG |
| 4116 |
MHV12-2.0K1000N |
HV-Power Supplies |
Traco Electronic AG |
| 4117 |
MIC5400N |
4 NAND gates, 2 inputs each, plastic housing |
ITT Semiconductors |
| 4118 |
MIC7400N |
4 NAND gates, 2 inputs each, plastic housing |
ITT Semiconductors |
| 4119 |
MK4027J-3 |
4096x1-bit dynamic RAM, 200ns acces time, 375ns cycle. |
Mostek |
| 4120 |
MK4027N-3 |
4096x1-bit dynamic RAM, 200ns acces time, 375ns cycle. |
Mostek |
| 4121 |
MK4096N-11 |
4096x1-bit dynamic RAM, 350ns acces time, 500ns cycle time, max. power 320mW. |
Mostek |
| 4122 |
MK4096N-16 |
4096x1-bit dynamic RAM, 300ns acces time, 425ns cycle time, max. power 385mW. |
Mostek |
| 4123 |
MK4096P-11 |
4096x1-bit dynamic RAM, 350ns acces time, 500ns cycle time, max. power 320mW. |
Mostek |
| 4124 |
MK4096P-16 |
4096x1-bit dynamic RAM, 300ns acces time, 425ns cycle time, max. power 385mW. |
Mostek |
| 4125 |
MK4118AJ-3 |
1Kx8-bit static RAM, 200ns acces time, 200ns cycle time. |
Mostek |
| 4126 |
MK4118AJ-3 |
1Kx8-bit static RAM, 200ns acces time, 200ns cycle time. |
Mostek |
| 4127 |
MK4118AN-3 |
1Kx8-bit static RAM, 200ns acces time, 200ns cycle time. |
Mostek |
| 4128 |
MK4118AN-3 |
1Kx8-bit static RAM, 200ns acces time, 200ns cycle time. |
Mostek |
| 4129 |
MK4118AP-3 |
1Kx8-bit static RAM, 200ns acces time, 200ns cycle time. |
Mostek |
| 4130 |
MK4118AP-3 |
1Kx8-bit static RAM, 200ns acces time, 200ns cycle time. |
Mostek |
| 4131 |
MK4801AJ-3 |
1K x 8-bit static RAM, 200ns |
Mostek |
| 4132 |
MK4801AN-3 |
1K x 8-bit static RAM, 200ns |
Mostek |
| 4133 |
MK4801AP-3 |
1K x 8-bit static RAM, 200ns |
Mostek |
| 4134 |
MK48Z08B100 |
100ns; 1W; 20mA; V(dd): -0.3 to +7.0V; CMOS 8K x 8 zeropower SRAM |
SGS Thomson Microelectronics |
| 4135 |
MK48Z09B100 |
100ns; 1W; 20mA; V(dd): -0.3 to +7.0V; CMOS 8K x 8 zeropower SRAM |
SGS Thomson Microelectronics |
| 4136 |
MK48Z18B100 |
100ns; 1W; 20mA; V(dd): -0.3 to +7.0V; CMOS 8K x 8 zeropower SRAM |
SGS Thomson Microelectronics |
| 4137 |
MK48Z19B100 |
100ns; 1W; 20mA; V(dd): -0.3 to +7.0V; CMOS 8K x 8 zeropower SRAM |
SGS Thomson Microelectronics |
| 4138 |
MLED60 |
Infrared-Emitting Diode 200nM PN Gallium Arsenide 120mW |
Motorola |
| 4139 |
MLED90 |
Infrared-Emitting Diode 200nM PN Gallium Arsenide 120mW |
Motorola |
| 4140 |
MLED900 |
Infrared LED 900nM PN Gallium Arsenide 120mW |
Motorola |
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