| No. |
Part Name |
Description |
Manufacturer |
| 4231 |
NE32500N |
C to KA band super low noise amplifier. N-channel HJ FET chip. Idss selection 20 to 60 mA. |
NEC |
| 4232 |
NE33200N |
SUPER LOW NOISE HJ FET |
NEC |
| 4233 |
NE5900N |
Call progress decoder |
Philips |
| 4234 |
NE71300N |
LOW NOISE L TO K-BAND GaAs MESFET |
NEC |
| 4235 |
NE76100N |
General purpose GaAs MESFET. IDSS 30 to 60 mA. |
NEC |
| 4236 |
NM27C512N200 |
524,288-bit (64K x 8) high performance CMOS EPROM, 200ns |
National Semiconductor |
| 4237 |
NM27C512NE200 |
524,288-bit (64K x 8) high performance CMOS EPROM, 200ns |
National Semiconductor |
| 4238 |
NM27C512Q200 |
524,288-bit (64K x 8) high performance CMOS EPROM, 200ns |
National Semiconductor |
| 4239 |
NM27C512QE200 |
524,288-bit (64K x 8) high performance CMOS EPROM, 200ns |
National Semiconductor |
| 4240 |
NM27C512QM200 |
524,288-bit (64K x 8) high performance CMOS EPROM, 200ns |
National Semiconductor |
| 4241 |
NM27C512V200 |
524,288-bit (64K x 8) high performance CMOS EPROM, 200ns |
National Semiconductor |
| 4242 |
NM27C512VE200 |
524,288-bit (64K x 8) high performance CMOS EPROM, 200ns |
National Semiconductor |
| 4243 |
NSC800N |
NSC800TM High-Performance Low-Power CMOS Microprocessor |
National Semiconductor |
| 4244 |
NSC800N-1 |
High-performance low-power CMOS microprocessor, 1.0 MHz |
National Semiconductor |
| 4245 |
NSC800N-1I |
High-performance low-power CMOS microprocessor, 1.0 MHz |
National Semiconductor |
| 4246 |
NSC800N-3 |
High-performance low-power CMOS microprocessor, 3.0 MHz |
National Semiconductor |
| 4247 |
NSC800N-3I |
High-performance low-power CMOS microprocessor, 3.0 MHz |
National Semiconductor |
| 4248 |
NSC800N-3M |
High-performance low-power CMOS microprocessor, 3.0 MHz |
National Semiconductor |
| 4249 |
NSC800N-4 |
High-performance low-power CMOS microprocessor, 4.0 MHz |
National Semiconductor |
| 4250 |
NSC800N-4I |
High-performance low-power CMOS microprocessor, 4.0 MHz |
National Semiconductor |
| 4251 |
NT100N10 |
123A, 100V, 9 mohm, TO264 |
ON Semiconductor |
| 4252 |
NTD6600N |
Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK |
ON Semiconductor |
| 4253 |
NTE2114 |
Integrated Circuit MOS, Static 4K RAM, 300ns |
NTE Electronics |
| 4254 |
NTE2532 |
Integrated Circuit NMOS, 32K EPROM, 300ns |
NTE Electronics |
| 4255 |
NTE2764 |
Integrated Circuit NMOS, 64K Erasable EPROM, 200ns |
NTE Electronics |
| 4256 |
NTE6006 |
Fast Recovery Rectifier, 40A, 200ns |
NTE Electronics |
| 4257 |
NTE6007 |
Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A. |
NTE Electronics |
| 4258 |
NTE6008 |
Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A. |
NTE Electronics |
| 4259 |
NTE6009 |
Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A. |
NTE Electronics |
| 4260 |
NTE6010 |
Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 600V. Average rectified forward current 40A. |
NTE Electronics |
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