| No. |
Part Name |
Description |
Manufacturer |
| 4111 |
GB301ZG-DC24-SF-B |
Relay. Coil voltage 24 VDC. Contact arrangement SPDT-NO/NC-DM/DB. Contact material gold finish. Cover side flang. Option test button. |
Global Components & Controls |
| 4112 |
GB301ZG-DC24-SF-L |
Relay. Coil voltage 24 VDC. Contact arrangement SPDT-NO/NC-DM/DB. Contact material gold finish. Cover side flang. Option neon lamp. |
Global Components & Controls |
| 4113 |
GB301ZG-DC48-SF-B |
Relay. Coil voltage 48 VDC. Contact arrangement SPDT-NO/NC-DM/DB. Contact material gold finish. Cover side flang. Option test button. |
Global Components & Controls |
| 4114 |
GB301ZG-DC48-SF-L |
Relay. Coil voltage 48 VDC. Contact arrangement SPDT-NO/NC-DM/DB. Contact material gold finish. Cover side flang. Option neon lamp. |
Global Components & Controls |
| 4115 |
GB301ZG-DC6-SF-B |
Relay. Coil voltage 6 VDC. Contact arrangement SPDT-NO/NC-DM/DB. Contact material gold finish. Cover side flang. Option test button. |
Global Components & Controls |
| 4116 |
GB301ZG-DC6-SF-L |
Relay. Coil voltage 6 VDC. Contact arrangement SPDT-NO/NC-DM/DB. Contact material gold finish. Cover side flang. Option neon lamp. |
Global Components & Controls |
| 4117 |
GT10G131 |
IGBT for strobe flash |
TOSHIBA |
| 4118 |
GT15G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4119 |
GT20G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4120 |
GT20G101(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4121 |
GT20G101SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
TOSHIBA |
| 4122 |
GT20G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4123 |
GT20G102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4124 |
GT20G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
TOSHIBA |
| 4125 |
GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4126 |
GT25G101(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4127 |
GT25G101SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
TOSHIBA |
| 4128 |
GT25G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4129 |
GT25G102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4130 |
GT25G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
TOSHIBA |
| 4131 |
GT28F160S3-100 |
WORD-WIDE FlashFile MEMORY FAMILY |
Intel |
| 4132 |
GT28F160S3-120 |
WORD-WIDE FlashFile MEMORY FAMILY |
Intel |
| 4133 |
GT28F160S3-130 |
Word-wide FlashFile memory. 16 Mbit, access speed 130 ns |
Intel |
| 4134 |
GT28F320S3-100 |
WORD-WIDE FlashFile MEMORY FAMILY |
Intel |
| 4135 |
GT28F320S3-110 |
Word-wide FlashFile memory. 32 Mbit, access speed 110 ns |
Intel |
| 4136 |
GT28F320S3-120 |
WORD-WIDE FlashFile MEMORY FAMILY |
Intel |
| 4137 |
GT28F320S3-140 |
Word-wide FlashFile memory. 32 Mbit, access speed 140 ns |
Intel |
| 4138 |
GT5G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4139 |
GT5G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4140 |
GT5G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
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