| No. |
Part Name |
Description |
Manufacturer |
| 4141 |
GT5G133 |
IGBT for strobe flash |
TOSHIBA |
| 4142 |
GT5G134 |
IGBT for strobe flash |
TOSHIBA |
| 4143 |
GT8G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4144 |
GT8G121 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4145 |
GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4146 |
GT8G132 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4147 |
GT8G151 |
IGBT for strobe flash |
TOSHIBA |
| 4148 |
HL, HLM |
Industrial Power, Flat (HL) and Miniature Flat (HLN), High Power/Size Ratio, Self-stacking Hardware, Non-Inductively Wound Models Available |
Vishay |
| 4149 |
HN29V25611A |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
Renesas |
| 4150 |
HN29V51211 |
512M AND type Flash Memory More than 32/113-sector (542/581/248-bit) |
Hitachi Semiconductor |
| 4151 |
HN29V51211T-50 |
512M AND type Flash Memory More than 32/113-sector (542/581/248-bit) |
Hitachi Semiconductor |
| 4152 |
HN29W12811 |
128M AND type Flash Memory More than 8/029-sector (135/657/984-bit) |
Hitachi Semiconductor |
| 4153 |
HN29W12811T-60 |
128M AND type Flash Memory More than 8/029-sector (135/657/984-bit) |
Hitachi Semiconductor |
| 4154 |
HN29W25611 |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) |
Hitachi Semiconductor |
| 4155 |
HN29W25611T |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) |
Hitachi Semiconductor |
| 4156 |
HN29W25611T-50 |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) |
Hitachi Semiconductor |
| 4157 |
HN29W25611T-50H |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) |
Hitachi Semiconductor |
| 4158 |
HVW, MVW |
Special Purpose, High Voltage, Blue Flameproof Coating Available on Request, Axial Leads |
Vishay |
| 4159 |
HY29F040A |
512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
Hynix Semiconductor |
| 4160 |
HY29F040AC-12 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 4161 |
HY29F040AC-12E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 4162 |
HY29F040AC-12I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 4163 |
HY29F040AC-15 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
| 4164 |
HY29F040AC-15E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
| 4165 |
HY29F040AC-15I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
| 4166 |
HY29F040AC-55 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
| 4167 |
HY29F040AC-55E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
| 4168 |
HY29F040AC-55I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
| 4169 |
HY29F040AC-70 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 70ns |
Hynix Semiconductor |
| 4170 |
HY29F040AC-70E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 70ns |
Hynix Semiconductor |
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