| No. |
Part Name |
Description |
Manufacturer |
| 4111 |
BC857BW-7-F |
Bipolar Transistors |
Diodes |
| 4112 |
BC857C |
Bipolar Transistors |
Diodes |
| 4113 |
BC857C |
Discrete Devices-Transistor-PNP Bipolar Transistor |
Taiwan Semiconductor |
| 4114 |
BC857C-7-F |
Bipolar Transistors |
Diodes |
| 4115 |
BC857CT |
Bipolar Transistors |
Diodes |
| 4116 |
BC857CT-7-F |
Bipolar Transistors |
Diodes |
| 4117 |
BC857CW |
Bipolar Transistors |
Diodes |
| 4118 |
BC857CW-7-F |
Bipolar Transistors |
Diodes |
| 4119 |
BC858A |
Bipolar Transistors |
Diodes |
| 4120 |
BC858A |
Discrete Devices-Transistor-PNP Bipolar Transistor |
Taiwan Semiconductor |
| 4121 |
BC858A-7-F |
Bipolar Transistors |
Diodes |
| 4122 |
BC858AW |
Bipolar Transistors |
Diodes |
| 4123 |
BC858AW-7-F |
Bipolar Transistors |
Diodes |
| 4124 |
BC858B |
Bipolar Transistors |
Diodes |
| 4125 |
BC858B |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 4126 |
BC858B |
Discrete Devices-Transistor-PNP Bipolar Transistor |
Taiwan Semiconductor |
| 4127 |
BC858B-7-F |
Bipolar Transistors |
Diodes |
| 4128 |
BC858BW |
Bipolar Transistors |
Diodes |
| 4129 |
BC858BW |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 4130 |
BC858BW-7-F |
Bipolar Transistors |
Diodes |
| 4131 |
BC858C |
Bipolar Transistors |
Diodes |
| 4132 |
BC858C |
hfe min 420 NF max. 10 dB Transistor polarity PNP Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
| 4133 |
BC858C |
Discrete Devices-Transistor-PNP Bipolar Transistor |
Taiwan Semiconductor |
| 4134 |
BC858C-7-F |
Bipolar Transistors |
Diodes |
| 4135 |
BC858CW |
Bipolar Transistors |
Diodes |
| 4136 |
BCR08AM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4137 |
BCR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4138 |
BCR10CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4139 |
BCR10CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4140 |
BCR10CS |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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