DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for POLA

Datasheets found :: 12369
Page: | 136 | 137 | 138 | 139 | 140 | 141 | 142 | 143 | 144 |
No. Part Name Description Manufacturer
4171 BCR3PM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4172 BCR5AM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4173 BCR5AM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4174 BCR5AS-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4175 BCR5AS-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4176 BCR5KM Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4177 BCR5PM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4178 BCR5PM-14 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4179 BCR5PM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4180 BCR6AM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4181 BCR6AM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4182 BCR8CM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4183 BCR8CM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4184 BCR8CS-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4185 BCR8CS-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4186 BCR8PM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4187 BCR8PM-14 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4188 BCR8PM-16 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4189 BCR8PM-20 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4190 BCR8PM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
4191 BCW34 Bipolar NPN Device SemeLAB
4192 BCW35 Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. SemeLAB
4193 BCY57 Bipolar NPN Device in a Hermetically sealed TO18 Metal Package SemeLAB
4194 BCY59C Bipolar NPN Device in A Hermetically sealed TO18 Metal Package SemeLAB
4195 BD137 hfe min 40 Transistor polarity NPN Current Ic continuous max 1 A Voltage Vceo 60 V Current Ic (hfe) 0.15 A Power Ptot 12.5 W Temperature power 25 ?C Transistors number of 1 SGS Thomson Microelectronics
4196 BD4719G Voltage detectors > Bipolar Voltage detector IC ROHM
4197 BD4720G Voltage detectors > Bipolar Voltage detector IC ROHM
4198 BD4721G Voltage detectors > Bipolar Voltage detector IC ROHM
4199 BD4722G Voltage detectors > Bipolar Voltage detector IC ROHM
4200 BD4723G Voltage detectors > Bipolar Voltage detector IC ROHM


Datasheets found :: 12369
Page: | 136 | 137 | 138 | 139 | 140 | 141 | 142 | 143 | 144 |



© 2024 - www Datasheet Catalog com