No. |
Part Name |
Description |
Manufacturer |
4171 |
BCR3PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4172 |
BCR5AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4173 |
BCR5AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4174 |
BCR5AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4175 |
BCR5AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4176 |
BCR5KM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4177 |
BCR5PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4178 |
BCR5PM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4179 |
BCR5PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4180 |
BCR6AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4181 |
BCR6AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4182 |
BCR8CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4183 |
BCR8CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4184 |
BCR8CS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4185 |
BCR8CS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4186 |
BCR8PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4187 |
BCR8PM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4188 |
BCR8PM-16 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4189 |
BCR8PM-20 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4190 |
BCR8PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4191 |
BCW34 |
Bipolar NPN Device |
SemeLAB |
4192 |
BCW35 |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. |
SemeLAB |
4193 |
BCY57 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
4194 |
BCY59C |
Bipolar NPN Device in A Hermetically sealed TO18 Metal Package |
SemeLAB |
4195 |
BD137 |
hfe min 40 Transistor polarity NPN Current Ic continuous max 1 A Voltage Vceo 60 V Current Ic (hfe) 0.15 A Power Ptot 12.5 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
4196 |
BD4719G |
Voltage detectors > Bipolar Voltage detector IC |
ROHM |
4197 |
BD4720G |
Voltage detectors > Bipolar Voltage detector IC |
ROHM |
4198 |
BD4721G |
Voltage detectors > Bipolar Voltage detector IC |
ROHM |
4199 |
BD4722G |
Voltage detectors > Bipolar Voltage detector IC |
ROHM |
4200 |
BD4723G |
Voltage detectors > Bipolar Voltage detector IC |
ROHM |
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