| No. |
Part Name |
Description |
Manufacturer |
| 421 |
12F100B |
V(rrm): 1000V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 422 |
12F120B |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 423 |
12F120B |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 424 |
1307028 |
Dipole Antenna for ISM Band |
Tyco Electronics |
| 425 |
1307031 |
2.4 GHz Patch Antenna for ISM Band |
Tyco Electronics |
| 426 |
135D |
Wet Tantalum Capacitors, Axial, Tantalum-Case with Glass-to-Tantalum Hermetic Seal, for - 55°C to + 200°C Operation |
Vishay |
| 427 |
1402 |
200 V single phase bridge 12 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 428 |
1402F |
200 V single phase bridge 12 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 429 |
1402UF |
200 V single phase bridge 12 A forward current, 70 ns recovery time |
Voltage Multipliers |
| 430 |
1406 |
600 V single phase bridge 12 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 431 |
1406F |
600 V single phase bridge 12 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 432 |
1406UF |
600 V single phase bridge 12 A forward current, 70 ns recovery time |
Voltage Multipliers |
| 433 |
1410 |
1000 V single phase bridge 12 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 434 |
1410F |
1000 V single phase bridge 12 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 435 |
1410UF |
1000 V single phase bridge 12 A forward current, 70 ns recovery time |
Voltage Multipliers |
| 436 |
1413 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks |
Vishay |
| 437 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 438 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 439 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 440 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 441 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 442 |
1417-25 |
1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications |
SGS Thomson Microelectronics |
| 443 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 444 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 445 |
1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
| 446 |
1502A |
200 V single phase bridge 22-25 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 447 |
1502FA |
200 V single phase bridge 22-25 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 448 |
1502UFA |
200 V single phase bridge 22-25 A forward current, 70 ns recovery time |
Voltage Multipliers |
| 449 |
1506A |
600 V single phase bridge 22-25 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 450 |
1506FA |
600 V single phase bridge 22-25 A forward current, 150 ns recovery time |
Voltage Multipliers |
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