No. |
Part Name |
Description |
Manufacturer |
481 |
1720-20 |
1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
482 |
1720-25 |
1.7-2.0GHz 25W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
483 |
1720-3 |
1.7-2.0GHz 3W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
484 |
1720-6 |
1.7-2.0GHz 6W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
485 |
1731 |
Marking for NE32740(C) part number, 40A/B NEC package |
NEC |
486 |
1738U |
1738U-Type Small Form-Factor Erbium-Doped Fiber Amplifier with Uncooled Pump |
Agere Systems |
487 |
1738UAA |
1738U-Type Small Form-Factor Erbium-Doped Fiber Amplifier with Uncooled Pump |
Agere Systems |
488 |
1738UBA |
1738U-Type Small Form-Factor Erbium-Doped Fiber Amplifier with Uncooled Pump |
Agere Systems |
489 |
1738UCA |
Small form-ractor erbium-doped fiber amplifier with uncooled pump. Connector FC/APC. Electrical connection: male 2 x 10 at 2 mm spacing. |
Agere Systems |
490 |
1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
491 |
1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
492 |
1893 |
1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
493 |
18Z4884 |
TRANSFORMER SELECTION GUIDE For T1/E1 Interface |
VITEC ELECTRONICS CORPORATION |
494 |
1922-18 |
1.9-2.2GHz 18W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
495 |
1924 |
Marking for NE32740A part number, 40A/B NEC package |
NEC |
496 |
1925 |
Marking for NE32740 part number, 40A/B NEC package |
NEC |
497 |
1926 |
Marking for NE73440A(D) part number, 40A/B NEC package |
NEC |
498 |
1927 |
Marking for NE73440B(D) part number, 40A/B NEC package |
NEC |
499 |
1949 |
Marking for NE41603(C) or NE41603(D) part number, 03 NEC package |
NEC |
500 |
1AS027 |
Silicon rectifier with avalanche character 1.5A 800V, approved under CV7645 for MIL applications |
Texas Instruments |
501 |
1AS029 |
Silicon rectifier with avalanche character 1.5A 1000V, approved under CV7645 for MIL applications |
Texas Instruments |
502 |
1AZ220-Y |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
503 |
1AZ220-Z |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
504 |
1AZ240-Y |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
505 |
1AZ240-Z |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
506 |
1AZ270-X |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
507 |
1AZ270-Y |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
508 |
1AZ270-Z |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
509 |
1AZ300-X |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
510 |
1AZ300-Y |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
| | | |