| No. |
Part Name |
Description |
Manufacturer |
| 421 |
ADR125 |
Precision, Micropower LD0 Voltage Reference in TSOT (5.0 VOUT) |
Analog Devices |
| 422 |
ADR127 |
Precision, Micropower LD0 1.25 VOUT Voltage Reference in TSOT |
Analog Devices |
| 423 |
AF114 |
PNP Germanium VHF Diffused Transistor in TO7 metal case |
Newmarket Transistors NKT |
| 424 |
AF115 |
PNP Germanium VHF Diffused Transistor in TO7 metal case |
Newmarket Transistors NKT |
| 425 |
AF116 |
PNP Germanium VHF Diffused Transistor in TO7 metal case |
Newmarket Transistors NKT |
| 426 |
AF117 |
PNP Germanium VHF Diffused Transistor in TO7 metal case |
Newmarket Transistors NKT |
| 427 |
AF124 |
PNP Germanium VHF Diffused Transistor in TO72 metal case |
Newmarket Transistors NKT |
| 428 |
AF125 |
PNP Germanium VHF Diffused Transistor in TO72 metal case |
Newmarket Transistors NKT |
| 429 |
AF126 |
PNP Germanium VHF Diffused Transistor in TO72 metal case |
Newmarket Transistors NKT |
| 430 |
AF127 |
PNP Germanium VHF Diffused Transistor in TO72 metal case |
Newmarket Transistors NKT |
| 431 |
AF202 |
PNP Germanium RF Transistor, for IF power stages in television sets |
Siemens |
| 432 |
AF202S |
PNP Germanium RF Transistor, for IF power stages in television sets |
Siemens |
| 433 |
AM0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
| 434 |
AM0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
| 435 |
AM1416-001 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 436 |
AM1416-003 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 437 |
AM80610-018 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
SGS Thomson Microelectronics |
| 438 |
AM80610-050 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
| 439 |
AM81416-006 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 440 |
AM81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 441 |
AM81416-020 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 442 |
AM82223-004 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 443 |
AM82223-012 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 444 |
AM82223-014 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 445 |
AM82223-018 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 446 |
AM82223-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 447 |
AM82324-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 448 |
AM82325-040 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
| 449 |
AM82327-004 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 450 |
AM82327-006 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
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