| No. |
Part Name |
Description |
Manufacturer |
| 481 |
ASY57N |
PNP Germanium RF Alloy Transistor in TO1 metal case |
Newmarket Transistors NKT |
| 482 |
ASY58N |
PNP Germanium RF Alloy Transistor in TO1 metal case |
Newmarket Transistors NKT |
| 483 |
ASY59N |
PNP Germanium RF Alloy Transistor in TO1 metal case |
Newmarket Transistors NKT |
| 484 |
ASY63N |
PNP Germanium RF Alloy Transistor in TO1 metal case |
Newmarket Transistors NKT |
| 485 |
ASY76 |
PNP Germanium AF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 486 |
ASY77 |
PNP Germanium AF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 487 |
ASY80 |
PNP Germanium AF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 488 |
AT17LV010-10DP |
FPGA Configuration EEPROM packaged in the 28-pin 400 mils wide FP package. |
Atmel |
| 489 |
ATA01502 |
The ATA01502D1C is an AGC Transimpedence Amplifier to be used in the following applications: SONET OC-3/SDH STM-1 Receiver, FDDI ... |
Anadigics Inc |
| 490 |
ATR2406 |
The ATR2406 is a single chip RF-transceiver intended for applications in the 2.4 GHz ISM band. The QFN32 packaged IC is a complete ... |
Atmel |
| 491 |
AWT6130 |
The AWT6130 provides the additional output power margin RF designers need to overcome additional post-PA insertion loss in tri-mode ... |
Anadigics Inc |
| 492 |
AWT6131 |
The AWT6131 provides the additional output power margin RF designers need to overcome additional post-PA insertion loss in tri-mode ... |
Anadigics Inc |
| 493 |
BA102 |
Silicon surface diode for tuning circuits in television receivers for BAND I/III |
VALVO |
| 494 |
BA109 |
Silicon surface diode for tuning circuits in television receivers for BAND IV/V |
VALVO |
| 495 |
BA592 |
PIN Diodes - Silicon RF switching diode for VHF band switching in TV/VTR tuners |
Infineon |
| 496 |
BA892 |
PIN Diodes - Silicon RF switching diode for VHF band switching in TV/VTR tuners |
Infineon |
| 497 |
BA892-02L |
Diodes for Bandswitching in Tunerapplications |
Infineon |
| 498 |
BAT17 |
Schottky Diodes - Silicon RF Schottky diode for mixer applications in the VHF/UHF range |
Infineon |
| 499 |
BAT17 |
-Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
Siemens |
| 500 |
BAT17 |
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
Siemens |
| 501 |
BAT17 |
-Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
Siemens |
| 502 |
BAT17 |
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
Siemens |
| 503 |
BAT17-04 |
Schottky Diodes - Silicon RF Schottky diode for mixer applications in the VHF/UHF range |
Infineon |
| 504 |
BAT17-04 |
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
Siemens |
| 505 |
BAT17-04W |
Schottky Diodes - Silicon RF Schottky diode for mixer applications in the VHF/UHF range |
Infineon |
| 506 |
BAT17-04W |
Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) |
Siemens |
| 507 |
BAT17-05 |
Schottky Diodes - Silicon RF Schottky diode for mixer applications in the VHF/UHF range |
Infineon |
| 508 |
BAT17-05 |
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
Siemens |
| 509 |
BAT17-05W |
Schottky Diodes - Silicon RF Schottky diode for mixer applications in the VHF/UHF range |
Infineon |
| 510 |
BAT17-05W |
Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) |
Siemens |
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