| No. |
Part Name |
Description |
Manufacturer |
| 421 |
2N5611 |
Bipolar PNP Device in a Hermetically sealed to66 Metal Package. |
SemeLAB |
| 422 |
2N5617 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 423 |
2N5619 |
Bipolar PNP Device in a Hermetically sealed to3 Metal Package. |
SemeLAB |
| 424 |
2N5620 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 425 |
2N5622 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 426 |
2N5623 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 427 |
2N5632 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 428 |
2N5633 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 429 |
2N5633 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 430 |
2N5663 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 431 |
2N5665 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 432 |
2N5675 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 433 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 434 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 435 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 436 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 437 |
2N5743 |
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 438 |
2N5758 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 439 |
2N5759 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 440 |
2N5781 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 441 |
2N5864 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
| 442 |
2N5867 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 443 |
2N5870 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 444 |
2N5871 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 445 |
2N5871 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 446 |
2N5871/1 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 447 |
2N5871/2 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 448 |
2N5872 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 449 |
2N5872 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 450 |
2N5872A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
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