| No. |
Part Name |
Description |
Manufacturer |
| 511 |
2N6654A |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 512 |
2N6654B |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 513 |
2N6655 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 514 |
2N6655/1 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 515 |
2N6655/2 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 516 |
2N6655/3 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 517 |
2N6655/4 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 518 |
2N6655A |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 519 |
2N6655B |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 520 |
2N6687 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 521 |
2N6786 |
N-Channel MOSFET in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 522 |
2N697 |
0.600W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 523 |
2N698 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 524 |
2N699 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 525 |
2N706 |
Silicon low-current fast switching NPN transistor - metal case |
IPRS Baneasa |
| 526 |
2N706A |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 527 |
2N708 |
0.360W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.200A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 528 |
2N708 |
Silicon low-current fast switching NPN transistor - metal case |
IPRS Baneasa |
| 529 |
2N718A |
0.500W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 530 |
2N720A |
0.500W Switching NPN Metal Can Transistor. 80V Vceo, A Ic, 20 hFE. |
Continental Device India Limited |
| 531 |
2N722 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 532 |
2N869 |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 533 |
2N915 |
0.360W General Purpose NPN Metal Can Transistor. 50V Vceo, A Ic, 50 - 200 hFE. |
Continental Device India Limited |
| 534 |
2N917 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE. |
Continental Device India Limited |
| 535 |
2N918 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 hFE. |
Continental Device India Limited |
| 536 |
2N929 |
Silicon low power general purpose NPN transistor - metal case |
IPRS Baneasa |
| 537 |
2N929 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 538 |
2N930 |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, - 600 hFE. |
Continental Device India Limited |
| 539 |
2N930 |
Silicon low power general purpose NPN transistor - metal case |
IPRS Baneasa |
| 540 |
2N930A |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, 100 - 600 hFE. |
Continental Device India Limited |
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