| No. |
Part Name |
Description |
Manufacturer |
| 421 |
2SC5717 |
Transistor Silicon NPN Triple Diffused Mesa Type Horizontal Deflection Output for Super High Resolution Display, Color TV, Digital TV. High Speed Switching Applications. |
TOSHIBA |
| 422 |
2SC5824T100 |
NPN High speed switching Transistor |
ROHM |
| 423 |
2SC5866TL |
NPN High speed switching Transistor |
ROHM |
| 424 |
2SC5876FRA |
NPN High speed switching Transistor (Corresponds to AEC-Q101) |
ROHM |
| 425 |
2SC5876FRAT106 |
NPN High speed switching Transistor (Corresponds to AEC-Q101) |
ROHM |
| 426 |
2SC5876T106 |
NPN High speed switching Transistor |
ROHM |
| 427 |
2SC689H |
Silicon NPN Epitaxial Planar Transistor, intended for use in High Speed Switching |
Hitachi Semiconductor |
| 428 |
2SC752(G)TM |
Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter Applications |
TOSHIBA |
| 429 |
2SC752G |
Silicon NPN epitaxial planar transistor, ultra high speed switching, computer, countor applications fT=400MHz |
TOSHIBA |
| 430 |
2SC752GTM |
Ultra High Speed Switching Applications Computer, Counter Applications |
TOSHIBA |
| 431 |
2SC752TM |
Ultra High Speed Switching Applications Computer, Counter Applications |
TOSHIBA |
| 432 |
2SC89H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 433 |
2SC907AH |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 434 |
2SC907H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 435 |
2SC90H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 436 |
2SC91H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 437 |
2SC945 |
NPN Silicon Transistor(AF amplifier and low speed switching) |
NEC |
| 438 |
2SC984H |
Silicon NPN Epitaxial LTP transistor, intended for use in Medium Speed Switching and Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 439 |
2SD1049 |
TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED SWITCHING |
Fuji Electric |
| 440 |
2SD1118 |
TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING |
Fuji Electric |
| 441 |
2SD1157 |
TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHOING |
Fuji Electric |
| 442 |
2SD1176 |
Si NPN triple diffused planar darlington. Medium speed switching. |
Panasonic |
| 443 |
2SD1176A |
Si NPN triple diffused planar darlington. Medium speed switching. |
Panasonic |
| 444 |
2SD1308 |
NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER AND LOW SPEED SWITCHING INDUSTRIAL USE |
Unknow |
| 445 |
2SD1564 |
Audio Frequency Power Amplifier and Low Speed Switching Industrial Use |
Unknow |
| 446 |
2SD1589 |
Audio Frequency Power Amplifier and Low Speed Switching Industrial Use |
Unknow |
| 447 |
2SD1590 |
Audio Frequency Power Amplifier and Low Speed Switching Industrial Use |
Unknow |
| 448 |
2SD1595 |
Audio Frequency Power Amplifier and Low Speed Switching Industrial Use |
Unknow |
| 449 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
| 450 |
2SD2498 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS |
TOSHIBA |
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