| No. |
Part Name |
Description |
Manufacturer |
| 541 |
2SK3287 |
Silicon N Channel MOS FET High Speed Switching |
Hitachi Semiconductor |
| 542 |
2SK3288 |
Silicon N Channel MOS FET High Speed Switching |
Hitachi Semiconductor |
| 543 |
2SK3289 |
Silicon N Channel MOS FET High Speed Switching |
Hitachi Semiconductor |
| 544 |
2SK3290 |
Silicon N Channel MOS FET High Speed Switching |
Hitachi Semiconductor |
| 545 |
2SK3348 |
Silicon N Channel MOS FET High Speed Switching |
Hitachi Semiconductor |
| 546 |
2SK3349 |
Silicon N Channel MOS FET High Speed Switching |
Hitachi Semiconductor |
| 547 |
2SK3378 |
Silicon N Channel MOS FET High Speed Switching |
Hitachi Semiconductor |
| 548 |
2SK3380 |
Silicon N Channel MOS FET High Speed Switching |
Hitachi Semiconductor |
| 549 |
2SK3451-01 |
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof |
Fuji Electric |
| 550 |
2SK680 |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
NEC |
| 551 |
2SK680A |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
NEC |
| 552 |
2SK681 |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
NEC |
| 553 |
2SK681A |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
NEC |
| 554 |
2SK982 |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications |
TOSHIBA |
| 555 |
34P4 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 556 |
35P4 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 557 |
36P4 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 558 |
37P4 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 559 |
AA1F4M |
The AA1F4M is designed for use medium speed switching circuit. |
NEC |
| 560 |
AAY30 |
Germanium gold bonded diode, high speed switching |
Mullard |
| 561 |
AAY32 |
Germanium gold bonded diode, high speed switching |
Mullard |
| 562 |
AAY33 |
Germanium gold bonded diode, high speed switching |
Mullard |
| 563 |
AAY48 |
Gold bounded germanium signal diode - very high speed switching |
SESCOSEM |
| 564 |
AAZ13 |
Germanium gold bonded diode, high speed switching |
Mullard |
| 565 |
ACY38 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 566 |
ASY81 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 567 |
B772 |
EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) |
Korea Electronics (KEC) |
| 568 |
B772 |
PNP (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) |
Samsung Electronic |
| 569 |
BAL74 |
SOT23 HIGH SPEED SWITCHING DIODES |
Zetex Semiconductors |
| 570 |
BAL99 |
SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODES |
Zetex Semiconductors |
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