| No. |
Part Name |
Description |
Manufacturer |
| 661 |
BAX84 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 662 |
BAY38 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 663 |
BAY43 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 664 |
BAY63 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 665 |
BAY67 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 666 |
BAY68 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 667 |
BAY71 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 668 |
BM63363S-VA |
600V IGBT Intelligent Power Module (IPM) for low speed switching drive |
ROHM |
| 669 |
BM63363S-VC |
600V IGBT Intelligent Power Module (IPM) for low speed switching drive |
ROHM |
| 670 |
BM63364S-VA |
600V IGBT Intelligent Power Module (IPM) for low speed switching drive |
ROHM |
| 671 |
BM63364S-VC |
600V IGBT Intelligent Power Module (IPM) for low speed switching drive |
ROHM |
| 672 |
BM63763S-VA |
600V IGBT Intelligent Power Module (IPM) for high speed switching drive |
ROHM |
| 673 |
BM63763S-VC |
600V IGBT Intelligent Power Module (IPM) for high speed switching drive |
ROHM |
| 674 |
BM63764S-VA |
600V IGBT Intelligent Power Module (IPM) for high speed switching drive |
ROHM |
| 675 |
BM63764S-VC |
600V IGBT Intelligent Power Module (IPM) for high speed switching drive |
ROHM |
| 676 |
BM63767S-VA |
600V IGBT Intelligent Power Module (IPM) for high speed switching drive |
ROHM |
| 677 |
BM63767S-VC |
600V IGBT Intelligent Power Module (IPM) for high speed switching drive |
ROHM |
| 678 |
BN1A4M |
The BN1A4M is designed for use in medium speed switching circuit. |
NEC |
| 679 |
BN1F4M |
The BN1F4M is designed for use in medium speed switching circuit. |
NEC |
| 680 |
BN1F4N |
The BN1F4N is esiged for use in medium speed switching circuit. |
NEC |
| 681 |
BSV52 |
SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR |
Zetex Semiconductors |
| 682 |
BSW11 |
Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits |
AEG-TELEFUNKEN |
| 683 |
BSW12 |
Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits. Electrically the BSW12 resembles 2N708 |
AEG-TELEFUNKEN |
| 684 |
BSW19 |
Silicon PNP epitaxial planar transistor for high speed switching applications |
AEG-TELEFUNKEN |
| 685 |
BSW20 |
Silicon PNP epitaxial planar transistor for high speed switching applications |
AEG-TELEFUNKEN |
| 686 |
BSX19 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 687 |
BSX20 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 688 |
BSX35 |
High speed switching PNP silicon transistor |
ICCE |
| 689 |
BSX72 |
Silicon NPN epitaxial planar transistor for high speed switching and RF amplifier circuits |
AEG-TELEFUNKEN |
| 690 |
BSX75 |
Silicon NPN epitaxial planar transistor for high speed switching and RF amplifier circuits |
AEG-TELEFUNKEN |
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