| No. |
Part Name |
Description |
Manufacturer |
| 421 |
AT60142ET-DD17M-E |
Rad Hard 512K x 8 Very Low Power CMOS SRAM |
Atmel |
| 422 |
AT60142ET-DD17MMQ |
Rad Hard 512K x 8 Very Low Power CMOS SRAM |
Atmel |
| 423 |
AT60142ET-DD17SMS |
Rad Hard 512K x 8 Very Low Power CMOS SRAM |
Atmel |
| 424 |
AT60142ET-DD20M-E |
Rad Hard 512K x 8 Very Low Power CMOS SRAM |
Atmel |
| 425 |
AT60142ET-DD20MMQ |
Rad Hard 512K x 8 Very Low Power CMOS SRAM |
Atmel |
| 426 |
AT60142ET-DD20SMS |
Rad Hard 512K x 8 Very Low Power CMOS SRAM |
Atmel |
| 427 |
AUIR3200S |
High side mosfet driver for very low Rdson automotive application with over-current, over-temperature protection and diagnostic. |
International Rectifier |
| 428 |
AUIR3200STR |
High side mosfet driver for very low Rdson automotive application with over-current, over-temperature protection and diagnostic. |
International Rectifier |
| 429 |
AUIR3240S |
High Side MOSFET Driver for Battery Switch Application where a very Low Quiescent Current is Required |
International Rectifier |
| 430 |
AUIR3240STR |
High Side MOSFET Driver for Battery Switch Application where a very Low Quiescent Current is Required |
International Rectifier |
| 431 |
BA243 |
Silicon Switching Diode, the forward resistance is constant and very little |
IPRS Baneasa |
| 432 |
BA244 |
Silicon Switching Diode, the forward resistance is constant and very little |
IPRS Baneasa |
| 433 |
BAR63 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 434 |
BAR63-03 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 435 |
BAR63-03W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 436 |
BAR63-04 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 437 |
BAR63-04W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 438 |
BAR63-05 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 439 |
BAR63-05W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 440 |
BAR63-06 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 441 |
BAR63-06W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 442 |
BAR63-W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 443 |
BAT30 |
silicon schottky diode (RF detector, Low-power mixer, Zerobias, Very low capacitance, for frequencies up to 25 GHz) |
Siemens |
| 444 |
BAT54XY |
Schottky barrier quadruple diode in very small SOT363 package |
NXP Semiconductors |
| 445 |
BAT54XY |
Schottky barrier quadruple diode in very small SOT363 package |
Philips |
| 446 |
BAT54XY |
BAT54XY; Schottky barrier quadruple diode in very small SOT363 package |
Philips |
| 447 |
BAV10 |
High speed diode for core gating applications in very fast memories |
Mullard |
| 448 |
BAW32A |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 449 |
BAW32B |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 450 |
BAW32C |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
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