| No. |
Part Name |
Description |
Manufacturer |
| 451 |
BAW32D |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 452 |
BAW32E |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 453 |
BAY89 |
Diffused silicon general purpose diodes with very high reverse voltage |
AEG-TELEFUNKEN |
| 454 |
BAY90 |
Diffused silicon general purpose diodes with very high reverse voltage |
AEG-TELEFUNKEN |
| 455 |
BAY91 |
Diffused silicon general purpose diodes with very high reverse voltage |
AEG-TELEFUNKEN |
| 456 |
BB669 |
Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance) |
Siemens |
| 457 |
BB689 |
Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series inductance Low series resistance) |
Siemens |
| 458 |
BF357S |
Epitaxial planar NPN transistor, very low noise, high gain and good intermodulation properties |
SGS-ATES |
| 459 |
BFQ65 |
NPN microwave NPN transistor, designed for use in the GHz range, very low noise |
Philips |
| 460 |
BFR37 |
Epitaxial planar NPN transistor, very high fT and very low Cre |
SGS-ATES |
| 461 |
BFR37 |
Epitaxial planar NPN transistor, very high fT and very low Cre |
SGS-ATES |
| 462 |
BFR38 |
Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz |
SGS-ATES |
| 463 |
BFR94 |
NPN resistance-stabilizer transistor in a SOT-48 capstan envelope, very low cross modulation, intermodulation and second harmonic distortion |
Philips |
| 464 |
BFW92 |
NPN high-frequency transistor, low noise over a wide current range, very high power gain and good intermodulation |
Philips |
| 465 |
BPX63 |
Silizium-Fotodiode mit sehr kleinem Dunkelstrom Silicon Photodiode with Very Low Dark Current |
Siemens |
| 466 |
BS616LV8022AC |
70/100ns 20-45mA 2.4-5.5V very low power/voltage CMOS SRAM 512K x 16 or 1M x 8bit switchable |
Brilliance Semiconductor |
| 467 |
BS616LV8022AI |
70/100ns 20-45mA 2.4-5.5V very low power/voltage CMOS SRAM 512K x 16 or 1M x 8bit switchable |
Brilliance Semiconductor |
| 468 |
BS62LV2563ST |
70ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 32K x 8bit |
Brilliance Semiconductor |
| 469 |
BSP280 |
IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current) |
Siemens |
| 470 |
BSY70 |
Silicon NPN Planar-Epitaxial Very Fast Switching Transistor |
TELEFUNKEN |
| 471 |
BUP314S |
IGBT (High switching speed Very low switching losses Low tail current Latch-up free Avalanche rated) |
Siemens |
| 472 |
BUP50A |
NPN MULTI-EPITAXIAL VERY FAST SWITCHING HIGH POWER TRANSISTOR |
SemeLAB |
| 473 |
C30902S |
Silicon avalanche photoddiode. High speed solid state detector for fiber optic and very low light-level applications |
PerkinElmer Optoelectronics |
| 474 |
C30921E |
Silicon avalanche photoddiode. High speed solid state detector for fiber optic and very low light-level applications |
PerkinElmer Optoelectronics |
| 475 |
C30921S |
Silicon avalanche photoddiode. High speed solid state detector for fiber optic and very low light-level applications |
PerkinElmer Optoelectronics |
| 476 |
C67040-A4207-A2 |
IGBT (High switching speed Very low switching losses Low tail current Latch-up free Avalanche rated) |
Siemens |
| 477 |
CD216A |
Lead free versions available, RoHS compliant (lead free version), Low profile, Surface mount, Very low forward voltage drop |
BOURNS |
| 478 |
CD216A-B120L |
Lead free versions available, RoHS compliant (lead free version), Low profile, Surface mount, Very low forward voltage drop |
BOURNS |
| 479 |
CD216A-B120LLF |
Lead free versions available, RoHS compliant (lead free version), Low profile, Surface mount, Very low forward voltage drop |
BOURNS |
| 480 |
CD216A-B120R |
Lead free versions available, RoHS compliant (lead free version), Low profile, Surface mount, Very low forward voltage drop |
BOURNS |
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