| No. |
Part Name |
Description |
Manufacturer |
| 421 |
2N3904 |
Vce=1.0V transistor |
MCC |
| 422 |
2N3906 |
Vce=1.0V transistor |
MCC |
| 423 |
2N4123 |
Ic=200mA, Vce=1.0V transistor |
MCC |
| 424 |
2N4124 |
Ic=200mA, Vce=1.0V transistor |
MCC |
| 425 |
2N4401 |
Vce=1.0V transistor |
MCC |
| 426 |
2N4403 |
Vce=1.0V transistor |
MCC |
| 427 |
2N5832 |
Vce=5.0V transistor |
MCC |
| 428 |
3DS16-325 |
512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating |
3D PLUS |
| 429 |
3DS16-325SC-15 |
512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating |
3D PLUS |
| 430 |
3DS16-325SC-20 |
512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating |
3D PLUS |
| 431 |
3DS16-325SI-15 |
512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating |
3D PLUS |
| 432 |
3DS16-325SI-20 |
512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating |
3D PLUS |
| 433 |
54LS189DM |
V(cc): +5.0V; 64-bit random access memory (with 3-state outputs) |
Fairchild Semiconductor |
| 434 |
54LS189FM |
V(cc): +5.0V; 64-bit random access memory (with 3-state outputs) |
Fairchild Semiconductor |
| 435 |
54S189DM |
V(cc): +5.0V; 64-bit random access memory (with 3-state outputs) |
Fairchild Semiconductor |
| 436 |
54S189FM |
V(cc): +5.0V; 64-bit random access memory (with 3-state outputs) |
Fairchild Semiconductor |
| 437 |
5962-0151101QXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none |
Aeroflex Circuit Technology |
| 438 |
5962-0151101TXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none |
Aeroflex Circuit Technology |
| 439 |
5962-0620705 |
�15kV ESD Protected, +5.0V, 1�A, 250kbps, RS-232 Transmitter/Receiver |
Intersil |
| 440 |
5962-0620706 |
�15kV ESD Protected, +5.0V, 1�A, 250kbps, RS-232 Transmitter/Receiver |
Intersil |
| 441 |
5962-0620707 |
�15kV ESD Protected, +5.0V, 1�A, 250kbps, RS-232 Transmitter/Receiver |
Intersil |
| 442 |
5962-0620708 |
�15kV ESD Protected, +5.0V, 1�A, 250kbps, RS-232 Transmitter/Receiver |
Intersil |
| 443 |
5962-87539013X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 444 |
5962-8753901LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 445 |
5962-87539053X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 446 |
5962-8753905LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 447 |
5962-88670013X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 448 |
5962-8867001LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 449 |
5962-88670053X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 450 |
5962-8867005LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
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