| No. |
Part Name |
Description |
Manufacturer |
| 451 |
5962-88724013X |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 452 |
5962-8872401LA |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 453 |
5962-88724043X |
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 454 |
5962-8872404LA |
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 455 |
5962-89755013X |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 456 |
5962-8975501LA |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 457 |
5962-89755043X |
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 458 |
5962-8975504LA |
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 459 |
5962D0053601QUA |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 460 |
5962D0053601QUC |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 461 |
5962D0053601QUX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 462 |
5962D0053601QXA |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 463 |
5962D0053601QXC |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 464 |
5962D0053601QXX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 465 |
5962D0053601TUA |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 466 |
5962D0053601TUC |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 467 |
5962D0053601TUX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 468 |
5962D0053601TXA |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 469 |
5962D0053601TXC |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 470 |
5962D0053601TXX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 471 |
5962D0053602QUA |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 472 |
5962D0053602QUC |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 473 |
5962D0053602QUX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 474 |
5962D0053602QXA |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 475 |
5962D0053602QXC |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 476 |
5962D0053602QXX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 477 |
5962D0053602TUA |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 478 |
5962D0053602TUC |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 479 |
5962D0053602TUX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 480 |
5962D0053602TXA |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
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