| No. |
Part Name |
Description |
Manufacturer |
| 4261 |
PSMN040-100MSE |
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications |
Nexperia |
| 4262 |
PSMN040-100MSE |
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications |
NXP Semiconductors |
| 4263 |
PSMN075-100MSE |
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications |
Nexperia |
| 4264 |
PSMN075-100MSE |
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications |
NXP Semiconductors |
| 4265 |
PT2323 |
6-Channel Audio Selector Utilizing CMOS Technology Specially Designed |
Princeton Technology Corporation |
| 4266 |
PWS725A, PWS726A |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 4267 |
PWS727, PWS728 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 4268 |
PWS740 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 4269 |
PWS745 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 4270 |
PWS750 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 4271 |
PX1002 |
Designed for TDMA IS-54 Receiver IF Applications |
RF Monolithics Inc |
| 4272 |
Q62702-A1084 |
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) |
Siemens |
| 4273 |
Q62702-A1145 |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 4274 |
Q62702-A1270 |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 4275 |
Q62702-B0825 |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 4276 |
Q62702-B0862 |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 4277 |
Q62702-B0904 |
Silicon Tuning Diode (Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units) |
Siemens |
| 4278 |
Q62702-B478 |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz; special design for use in TV-sat indoor units) |
Siemens |
| 4279 |
Q62702-B592 |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units) |
Siemens |
| 4280 |
Q62702-B599 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 4281 |
Q62702-B628 |
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) |
Siemens |
| 4282 |
Q62702-B631 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 4283 |
Q62702-B663 |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 4284 |
Q62702-B664 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 4285 |
Q62702-B70 |
Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) |
Siemens |
| 4286 |
Q62702-B802 |
Silicon Tuning Diode (Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units) |
Siemens |
| 4287 |
Q62702-B824 |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 4288 |
RC288DPI |
Modem Designer Guide |
Conexant |
| 4289 |
RCA-40953 |
156MHz Silicon NPN Overlay RF Transistor designed for VHF marine transmitters |
RCA Solid State |
| 4290 |
RCA-40954 |
156MHz Silicon NPN Overlay RF Transistor designed for VHF marine transmitters |
RCA Solid State |
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