| No. |
Part Name |
Description |
Manufacturer |
| 4321 |
RFS1003 |
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ... |
Anadigics Inc |
| 4322 |
RFS1006 |
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ... |
Anadigics Inc |
| 4323 |
RFSP2010 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... |
Anadigics Inc |
| 4324 |
RFSP2020 |
The RFS P2020 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... |
Anadigics Inc |
| 4325 |
RFSP5022 |
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ... |
Anadigics Inc |
| 4326 |
RMY10 |
Hall multiplier in ferrite pot core design |
Siemens |
| 4327 |
RW |
Vitreous Wirewound Resistors, All welded construction, Ceramic core, Models acc.MIL-R-26 available, Complete vitreous coating for perfect humidity protection, Adjustable and non inductive design available, TC 100...180ppm/K |
Vishay |
| 4328 |
S1T2410B01 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 4329 |
S1T2410B01-D0B0 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 4330 |
S1T2410B02 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 4331 |
S1T2410B02-D0B0 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 4332 |
S50A1H |
Clamping caps for disc components in "flatpack" design |
Siemens |
| 4333 |
S50A1L |
Clamping caps for disc components in "flatpack" design |
Siemens |
| 4334 |
S61A1L |
Clamping caps for disc components in "flatpack" design |
Siemens |
| 4335 |
S61A1N |
Clamping caps for disc components in "flatpack" design |
Siemens |
| 4336 |
S6431M |
Design Considerations for the RCA-S6431M Silicon Controlled Rectifier in High-Current Pulse Applications - App Note |
RCA Solid State |
| 4337 |
SAB 80C515A-N18 |
8-bit microcontroller (not for new designs) |
Infineon |
| 4338 |
SAB 80C515A-N18-T3 |
8-bit microcontroller (not for new designs) |
Infineon |
| 4339 |
SAB 80C517A-N18 |
8-bit microcontroller (not for new designs) |
Infineon |
| 4340 |
SAB 80C517A-N18-T3 |
8-bit microcontroller (not for new designs) |
Infineon |
| 4341 |
SAB 80C537-16-N |
8-bit microcontroller (not for new designs) |
Infineon |
| 4342 |
SAB 80C537-N |
8-Bit CMOS Single-Chip Microcontroller (not for new designs) |
Infineon |
| 4343 |
SAB 80C537-N16 |
8-Bit CMOS Single-Chip Microcontroller (not for new designs) |
Infineon |
| 4344 |
SAB C509-LM |
8-bit microcontroller (not for new designs) |
Infineon |
| 4345 |
SAB C515-L24N |
8-Bit-microcontroller (not for new designs) |
Infineon |
| 4346 |
SAB C517A-LN |
8-bit microcontroller (not for new designs) |
Infineon |
| 4347 |
SAF C509-LM |
8-bit microcontroller (not for new designs) |
Infineon |
| 4348 |
SAK C509-LM |
8-bit microcontroller (not for new designs) |
Infineon |
| 4349 |
SD1014-02 |
NPN transistor designed for VHF FM mobile and marine transmitters 12.5V 15W |
SGS Thomson Microelectronics |
| 4350 |
SD1070 |
Silicon epitaxial NPN planar high-frequency transistor employs a multi emitter electrode design 28V 13.5W |
SGS Thomson Microelectronics |
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