No. |
Part Name |
Description |
Manufacturer |
4291 |
2N6542 |
3A power-switching N-P-N transistor. |
General Electric Solid State |
4292 |
2N6543 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4293 |
2N6544 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4294 |
2N6544 |
5A power-switching N-P-N transistor. |
General Electric Solid State |
4295 |
2N6545 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4296 |
2N6545 |
5A power-switching N-P-N transistor. |
General Electric Solid State |
4297 |
2N6546 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4298 |
2N6546 |
10A power-switching N-P-N transistor. |
General Electric Solid State |
4299 |
2N6547 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4300 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
4301 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
4302 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
4303 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
4304 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
4305 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
4306 |
2N6569 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4307 |
2N656A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
4308 |
2N6576 |
15 A N-P-N darlington power transistor. 60 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
4309 |
2N6576 |
15 AMPERE NPN DARLINGTON POWER TRAN |
General Semiconductor |
4310 |
2N6577 |
15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
4311 |
2N6577 |
15 AMPERE NPN DARLINGTON POWER TRAN |
General Semiconductor |
4312 |
2N6578 |
15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
4313 |
2N6578 |
15 AMPERE NPN DARLINGTON POWER TRAN |
General Semiconductor |
4314 |
2N657A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
4315 |
2N6594 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4316 |
2N6609 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4317 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
4318 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
4319 |
2N6649 |
10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
4320 |
2N6650 |
10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
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