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Datasheets for ENERAL

Datasheets found :: 37384
Page: | 143 | 144 | 145 | 146 | 147 | 148 | 149 | 150 | 151 |
No. Part Name Description Manufacturer
4381 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
4382 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
4383 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
4384 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
4385 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
4386 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
4387 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
4388 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
4389 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
4390 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
4391 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
4392 2N6788 N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. General Electric Solid State
4393 2N6796 N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. General Electric Solid State
4394 2N681 25A silicon controlled rectifier. Vrsom 35V. General Electric Solid State
4395 2N682 25A silicon controlled rectifier. Vrsom 75V. General Electric Solid State
4396 2N683 25A silicon controlled rectifier. Vrsom 150V. General Electric Solid State
4397 2N684 25A silicon controlled rectifier. Vrsom 225V. General Electric Solid State
4398 2N685 25A silicon controlled rectifier. Vrsom 300V. General Electric Solid State
4399 2N686 25A silicon controlled rectifier. Vrsom 350V. General Electric Solid State
4400 2N687 25A silicon controlled rectifier. Vrsom 400V. General Electric Solid State
4401 2N688 25A silicon controlled rectifier. Vrsom 500V. General Electric Solid State
4402 2N689 25A silicon controlled rectifier. Vrsom 600V. General Electric Solid State
4403 2N690 25A silicon controlled rectifier. Vrsom 720V. General Electric Solid State
4404 2N691 25A silicon controlled rectifier. Vrsom 840V. General Electric Solid State
4405 2N692 25A silicon controlled rectifier. Vrsom 960V. General Electric Solid State
4406 2N696 Leaded Small Signal Transistor General Purpose Central Semiconductor
4407 2N696 General purpose NPN transistor FERRANTI
4408 2N696 General purpose NPN silicon planar epitaxial transistor ITT Semiconductors
4409 2N696 Silicon NPN planar general purpose transistor Transitron Electronic
4410 2N697 0.600W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.500A Ic, 40 - 120 hFE. Continental Device India Limited


Datasheets found :: 37384
Page: | 143 | 144 | 145 | 146 | 147 | 148 | 149 | 150 | 151 |



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