No. |
Part Name |
Description |
Manufacturer |
4381 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
4382 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
4383 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
4384 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
4385 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
4386 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
4387 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
4388 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
4389 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
4390 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
4391 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
4392 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
4393 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
4394 |
2N681 |
25A silicon controlled rectifier. Vrsom 35V. |
General Electric Solid State |
4395 |
2N682 |
25A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
4396 |
2N683 |
25A silicon controlled rectifier. Vrsom 150V. |
General Electric Solid State |
4397 |
2N684 |
25A silicon controlled rectifier. Vrsom 225V. |
General Electric Solid State |
4398 |
2N685 |
25A silicon controlled rectifier. Vrsom 300V. |
General Electric Solid State |
4399 |
2N686 |
25A silicon controlled rectifier. Vrsom 350V. |
General Electric Solid State |
4400 |
2N687 |
25A silicon controlled rectifier. Vrsom 400V. |
General Electric Solid State |
4401 |
2N688 |
25A silicon controlled rectifier. Vrsom 500V. |
General Electric Solid State |
4402 |
2N689 |
25A silicon controlled rectifier. Vrsom 600V. |
General Electric Solid State |
4403 |
2N690 |
25A silicon controlled rectifier. Vrsom 720V. |
General Electric Solid State |
4404 |
2N691 |
25A silicon controlled rectifier. Vrsom 840V. |
General Electric Solid State |
4405 |
2N692 |
25A silicon controlled rectifier. Vrsom 960V. |
General Electric Solid State |
4406 |
2N696 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
4407 |
2N696 |
General purpose NPN transistor |
FERRANTI |
4408 |
2N696 |
General purpose NPN silicon planar epitaxial transistor |
ITT Semiconductors |
4409 |
2N696 |
Silicon NPN planar general purpose transistor |
Transitron Electronic |
4410 |
2N697 |
0.600W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
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