| No. |
Part Name |
Description |
Manufacturer |
| 4291 |
2W06G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 4292 |
2W08 |
SINGLE PHASE 2.0 AMP BRIDGE RECTIFIERS |
Formosa MS |
| 4293 |
2W08G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 4294 |
2W10 |
SINGLE PHASE 2.0 AMP BRIDGE RECTIFIERS |
Formosa MS |
| 4295 |
2W10G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 4296 |
2X |
Marking for NE68135 part number, 35 NEC (MICRO-X) package, X=LOT CODE |
NEC |
| 4297 |
2ZC100 |
Zener diode for constant voltage regulation, telephone, printer uses |
TOSHIBA |
| 4298 |
2ZC110 |
Zener diode for constant voltage regulation, telephone, printer uses |
TOSHIBA |
| 4299 |
2ZC120 |
Zener diode for constant voltage regulation, telephone, printer uses |
TOSHIBA |
| 4300 |
3003 |
3.0GHz 3.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 4301 |
3005 |
3.0GHz 5.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 4302 |
307C LIGHTING THERMISTORS |
PTC Thermistors For Electronic Fluorescent Ballasts |
Vishay |
| 4303 |
30A01C |
PNP Bipolar Transistor for Audio Power Amplifier Applications |
ON Semiconductor |
| 4304 |
30D2 |
LOW FORWARD VOLTAGE DROP |
Nihon |
| 4305 |
30D4 |
LOW FORWARD VOLTAGE DROP |
Nihon |
| 4306 |
30FWJ2C48M |
SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 4307 |
30FWJ2CZ47M |
SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE LOW FORWARD VOLTAGE SCHOTTKY BARRIER SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 4308 |
30KW102 |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4309 |
30KW102A |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4310 |
30KW108 |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4311 |
30KW108A |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4312 |
30KW120 |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4313 |
30KW120A |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4314 |
30KW132 |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4315 |
30KW132A |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4316 |
30KW144 |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4317 |
30KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4318 |
30KW156 |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4319 |
30KW156A |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4320 |
30KW168 |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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