| No. |
Part Name |
Description |
Manufacturer |
| 4321 |
30KW168A |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4322 |
30KW180 |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4323 |
30KW180A |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4324 |
30KW198 |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4325 |
30KW198A |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4326 |
30KW216 |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4327 |
30KW216A |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4328 |
30KW240 |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4329 |
30KW240A |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4330 |
30KW258 |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4331 |
30KW258A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4332 |
30KW270 |
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4333 |
30KW270A |
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4334 |
30KW288 |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4335 |
30KW288A |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 4336 |
3102 |
200 V three phase bridge 2 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 4337 |
3102F |
200 V three phase bridge 2 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 4338 |
3102UF |
200 V three phase bridge 2 A forward current, 70 ns recovery time |
Voltage Multipliers |
| 4339 |
3106 |
600 V three phase bridge 2 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 4340 |
3106F |
600 V three phase bridge 2 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 4341 |
3106UF |
600 V three phase bridge 2 A forward current, 70 ns recovery time |
Voltage Multipliers |
| 4342 |
3110 |
1000 V three phase bridge 2 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 4343 |
3110-12SA |
3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI |
Hirose Electric |
| 4344 |
3110-14SA |
3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI |
Hirose Electric |
| 4345 |
3110-16SA |
3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI |
Hirose Electric |
| 4346 |
3110-6SA |
3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI |
Hirose Electric |
| 4347 |
3110-8SA |
3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI |
Hirose Electric |
| 4348 |
3110F |
1000 V three phase bridge 2 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 4349 |
3110UF |
1000 V three phase bridge 2 A forward current, 70 ns recovery time |
Voltage Multipliers |
| 4350 |
3121 |
HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION |
Allegro MicroSystems |
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