| No. |
Part Name |
Description |
Manufacturer |
| 451 |
PBSS5320X |
PBSS5320X; 20 V, 3 A PNP low VCEsat (BISS) transistor |
Philips |
| 452 |
PBSS5520X |
PBSS5520X; 20 V, 5 A PNP low VCEsat (BISS) transistor |
Philips |
| 453 |
PD7006 |
2 mA, 20 V, InGaAs photodiode for optical communication |
Mitsubishi Electric Corporation |
| 454 |
PD7936 |
2 mA, 20 V, InGaAs photodiode for optical communication |
Mitsubishi Electric Corporation |
| 455 |
PE1000D-13UV |
Germax focused xenon arc lamp. Power 1000 watts, current 50 amps (DC), operating voltage 20 volts (DC). |
PerkinElmer Optoelectronics |
| 456 |
PMDT290UCE |
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET |
Nexperia |
| 457 |
PMDT290UCE |
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET |
NXP Semiconductors |
| 458 |
PMEG2005EL |
PMEG2005EL; 20 V, 0.5 A very low Vf MEGA Schottky barrier rectifier in leadless ultra small SOD882 |
Philips |
| 459 |
PMEG2010AEB |
PMEG2010AEB; 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package |
Philips |
| 460 |
PMEG2010AEJ |
PMEG2010AEJ; 20 V, 1 A very low Vf MEGA Schottky barrier rectifier in SOD323F package |
Philips |
| 461 |
PMEG2015EJ |
PMEG2015EJ; 20 V, 1.5 A very low Vf MEGA Schottky barrier rectifier in SOD323F package |
Philips |
| 462 |
PMEG2020AEA |
PMEG2020AEA; 20 V, 2 A very low Vf MEGA Schottky barrier rectifier in SOD323 (SC-76) package |
Philips |
| 463 |
PMEG2020EH |
PMEG2020EH; 20 V, 2 A very low Vf MEGA Schottky barrier rectifier in SOD123F package |
Philips |
| 464 |
PMEG2020EJ |
PMEG2020EJ; 20 V, 2 A very low Vf MEGA Schottky barrier rectifier in SOD323F package |
Philips |
| 465 |
PMGD290UCEA |
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET |
Nexperia |
| 466 |
PMGD290UCEA |
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET |
NXP Semiconductors |
| 467 |
PSS9012G |
PSS9012 series; 20 V PNP general purpose transistors |
Philips |
| 468 |
PSS9012H |
PSS9012 series; 20 V PNP general purpose transistors |
Philips |
| 469 |
PSS9013G |
PSS9013 series; 20 V NPN general purpose transistors |
Philips |
| 470 |
PSS9013H |
PSS9013 series; 20 V NPN general purpose transistors |
Philips |
| 471 |
SMBJ5932A |
1.5W silicon surface mount zener diode. Zener voltage 20 V. Test current 18.7 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 472 |
SMBJ5932B |
1.5W silicon surface mount zener diode. Zener voltage 20 V. Test current 18.7 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 473 |
SMBJ5932C |
1.5W silicon surface mount zener diode. Zener voltage 20 V. Test current 18.7 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 474 |
SMBJ5932D |
1.5W silicon surface mount zener diode. Zener voltage 20 V. Test current 18.7 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 475 |
SR1020A |
Schottky barrier rectifier. Negative CT. Maximum recurrent peak reverse voltage 20 V. Maximum average forward rectified current 10 A. |
Bytes |
| 476 |
SR1020A |
Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 10.0 A. |
Chenyi Electronics |
| 477 |
SR1020C |
Schottky barrier rectifier. Positive CT. Maximum recurrent peak reverse voltage 20 V. Maximum average forward rectified current 10 A. |
Bytes |
| 478 |
SR1620A |
Schottky barrier rectifier. Negative CT. Maximum recurrent peak reverse voltage 20 V. Maximum average forward rectified current 16 A. |
Bytes |
| 479 |
SR1620A |
Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 16.0 A. |
Chenyi Electronics |
| 480 |
SR3020A |
Schottky barrier rectifier. Negative CT. Maximum recurrent peak reverse voltage 20 V. Maximum average forward rectified current 30 A. |
Bytes |
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