| No. |
Part Name |
Description |
Manufacturer |
| 481 |
SR3020C |
Schottky barrier rectifier. Positive CT. Maximum recurrent peak reverse voltage 20 V. Maximum average forward rectified current 30 A. |
Bytes |
| 482 |
SR320 |
Surface mount schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 3.0 A. |
Chenyi Electronics |
| 483 |
SR820R |
Schottky barrier rectifier. Case negative. Maximum recurrent peak reverse voltage 20 V. Maximum average forward rectified current 8.0 A. |
Bytes |
| 484 |
SRF1020 |
Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 10.0 A. |
Chenyi Electronics |
| 485 |
SRF1020A |
Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 10.0 A. |
Chenyi Electronics |
| 486 |
SRF1620A |
Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 16.0 A. |
Chenyi Electronics |
| 487 |
STL120N2VH5 |
N-channel 20 V, 0.002 Ohm, 28 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package |
ST Microelectronics |
| 488 |
STL4P2UH7 |
P-channel 20 V, 0.087 Ohm typ., 4 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 2x2 package |
ST Microelectronics |
| 489 |
STL6N2VH5 |
N-channel 20 V, 0.025 Ohm typ., 6 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 2x2 package |
ST Microelectronics |
| 490 |
STL8P2UH7 |
P-channel 20 V, 0.0195 Ohm typ., 8 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 2x2 package |
ST Microelectronics |
| 491 |
STL9P2UH7 |
P-channel 20 V, 0.0195 Ohm typ., 9 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 3.3x3.3 package |
ST Microelectronics |
| 492 |
STR1P2UH7 |
P-channel 20 V, 0.075 Ohm typ., 1.4 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in a SOT23-6L package |
ST Microelectronics |
| 493 |
STR2N2VH5 |
N-channel 20 V, 0.025 Ohm typ., 2.3 A STripFET H5 Power MOSFET in SOT-23 package |
ST Microelectronics |
| 494 |
STS9P2UH7 |
P-channel 20 V, 0.0195 Ohm typ., 9 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in a SO-8 package |
ST Microelectronics |
| 495 |
STT3P2UH7 |
P-channel 20 V, 0.075 Ohm typ., 3 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in a SOT23-6L package |
ST Microelectronics |
| 496 |
STT5N2VH5 |
N-channel 20 V, 0.025 Ohm typ., 5 A STripFET(TM) V Power MOSFET in SOT23-6L package |
ST Microelectronics |
| 497 |
STT7P2UH7 |
P-channel 20 V, 0.0195 Ohm typ., 7 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in a SOT23-6L package |
ST Microelectronics |
| 498 |
UTV-005 |
0.5 W, 20 V, 470-860 MHz, UHF TV linear |
Acrian |
| 499 |
UTV-005-2 |
0.5 W, 20 V, 470-860 MHz, UHF TV linear |
Acrian |
| 500 |
UTV-005-3 |
0.5 W, 20 V, 470-860 MHz, UHF TV linear |
Acrian |
| 501 |
UTV-005-4 |
0.5 W, 20 V, 470-860 MHz, UHF TV linear |
Acrian |
| 502 |
UTV-010 |
1 W, 20 V, 470-860 MHz, UHF TV linear |
Acrian |
| 503 |
UTV-010-2 |
1 W, 20 V, 470-860 MHz, UHF TV linear |
Acrian |
| 504 |
UTV-010-3 |
1 W, 20 V, 470-860 MHz, UHF TV linear |
Acrian |
| 505 |
UTV-010-4 |
1 W, 20 V, 470-860 MHz, UHF TV linear |
Acrian |
| 506 |
UTV005 |
0.5 W, 20 V, 470-860 MHz common emitter transistor |
GHz Technology |
| 507 |
UTV010 |
1 Watt, 20 Volts, Class A UHF Television - Band IV & V |
GHz Technology |
| 508 |
ZMM5250A |
Surface mount zener diode. Nominal zener voltage 20 V. Test current 6.2 mA. +-3% tolerance. |
Jinan Gude Electronic Device |
| 509 |
ZMM5250C |
Surface mount zener diode. Nominal zener voltage 20 V. Test current 6.2 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 510 |
ZMM5250D |
Surface mount zener diode. Nominal zener voltage 20 V. Test current 6.2 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
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