| No. |
Part Name |
Description |
Manufacturer |
| 451 |
1PS301 |
Dual high-speed switching diode |
NXP Semiconductors |
| 452 |
1PS302 |
Dual high-speed switching diode |
Nexperia |
| 453 |
1PS302 |
Dual high-speed switching diode |
NXP Semiconductors |
| 454 |
1S1219H |
Silicon Epitaxial Planar Diode, used for High Speed Switching |
Hitachi Semiconductor |
| 455 |
1S1220H |
Silicon Epitaxial Planar Diode, used for High Speed Switching |
Hitachi Semiconductor |
| 456 |
1S1832 |
Rectifier Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
TOSHIBA |
| 457 |
1S1834 |
Rectifier Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
TOSHIBA |
| 458 |
1S1835 |
Rectifier Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
TOSHIBA |
| 459 |
1S1837 |
Silicon diffused junction rectifier, High Voltage Rectifier for Color Television Receivers Application (Doubler Circuits) |
TOSHIBA |
| 460 |
1S1838 |
Silicon diffused junction high voltage rectifier 45kV 1A |
TOSHIBA |
| 461 |
1S2074 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 462 |
1S2074H |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 463 |
1S2074H |
Silicon Epitaxial Plana Diode, intended for use in High Speed Switching |
Hitachi Semiconductor |
| 464 |
1S2075 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 465 |
1S2075K |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 466 |
1S2237B |
Silicon diffused junction high-voltage rectifier, 18kV |
TOSHIBA |
| 467 |
1S77H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 468 |
1S78H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 469 |
1S79H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 470 |
1S84H |
Silicon Diffused for High Voltage Switching |
Hitachi Semiconductor |
| 471 |
1S920 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 472 |
1S920 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 473 |
1S921 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 474 |
1S921 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 475 |
1S922 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 476 |
1S922 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 477 |
1S923 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 478 |
1S923 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 479 |
1SS108 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
| 480 |
1SS118 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
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