| No. |
Part Name |
Description |
Manufacturer |
| 511 |
1SS352 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 512 |
1SS353 |
Silicon Epitaxial Planar High-Speed Switching Diodes |
ROHM |
| 513 |
1SS354 |
Silicon Epitaxial Planar High-Speed Switching Diodes |
ROHM |
| 514 |
1SS356 |
Diodes > High Frequency Diodes > Band switching diodes |
ROHM |
| 515 |
1SS357 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 516 |
1SS360 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 517 |
1SS360F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 518 |
1SS361 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 519 |
1SS361F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 520 |
1SS362 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 521 |
1SS367 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 522 |
1SS368 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) |
TOSHIBA |
| 523 |
1SS369 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) |
TOSHIBA |
| 524 |
1SS370 |
Diode Silicon Epitaxial Planar Type High Voltage, High Speed Switching Applications |
TOSHIBA |
| 525 |
1SS370 |
Diode Silicon Epitaxial Planar Type High Voltage, High Speed Switching Applications |
TOSHIBA |
| 526 |
1SS372 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 527 |
1SS374 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 528 |
1SS377 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
| 529 |
1SS378 |
Diode Silicon Epitaxial Planar Schottky Barrier Type High Speed Switching |
TOSHIBA |
| 530 |
1SS382 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 531 |
1SS383 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 532 |
1SS384 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 533 |
1SS385 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
| 534 |
1SS385F |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
| 535 |
1SS387 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 536 |
1SS388 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 537 |
1SS389 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 538 |
1SS390 |
Diodes > High Frequency Diodes > Band switching diodes |
ROHM |
| 539 |
1SS391 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 540 |
1SS392 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| | | |
