| No. |
Part Name |
Description |
Manufacturer |
| 451 |
200D,202D |
Wet Tantalum Capacitors, Wet Sintered Anode Components, Capacitor Assemblies, Type 202D Designed to Meet the Performance and Marking Requirements of Military Style CL55 in Accordance with MIL-DTL-3965 |
Vishay |
| 452 |
200D6XXX |
Type 200D / Wet Tantalum Capacitors |
Vishay |
| 453 |
20DZ10 |
Silicon Zener diode 20W |
IPRS Baneasa |
| 454 |
20DZ100 |
Silicon zener diode 20W |
IPRS Baneasa |
| 455 |
20DZ12 |
Silicon Zener diode 20W |
IPRS Baneasa |
| 456 |
20DZ120 |
Silicon zener diode 20W |
IPRS Baneasa |
| 457 |
20DZ15 |
Silicon Zener diode 20W |
IPRS Baneasa |
| 458 |
20DZ150 |
Silicon zener diode 20W |
IPRS Baneasa |
| 459 |
20DZ18 |
Silicon Zener diode 20W |
IPRS Baneasa |
| 460 |
20DZ180 |
Silicon zener diode 20W |
IPRS Baneasa |
| 461 |
20DZ22 |
Silicon Zener diode 20W |
IPRS Baneasa |
| 462 |
20DZ27 |
Silicon zener diode 20W |
IPRS Baneasa |
| 463 |
20DZ33 |
Silicon zener diode 20W |
IPRS Baneasa |
| 464 |
20DZ39 |
Silicon zener diode 20W |
IPRS Baneasa |
| 465 |
20DZ47 |
Silicon zener diode 20W |
IPRS Baneasa |
| 466 |
20DZ56 |
Silicon zener diode 20W |
IPRS Baneasa |
| 467 |
20DZ68 |
Silicon zener diode 20W |
IPRS Baneasa |
| 468 |
20DZ6V8 |
Silicon Zener diode 20W |
IPRS Baneasa |
| 469 |
20DZ8 |
Silicon Zener diode 20W |
IPRS Baneasa |
| 470 |
20DZ82 |
Silicon zener diode 20W |
IPRS Baneasa |
| 471 |
20PM2 |
20A Single Phase Rectifier Bridge 200V |
IPRS Baneasa |
| 472 |
2722 162 06051 |
ISOLATORS for P.C. Board Mounting, frequency range 2038,5 to 2108,5 MHz |
Philips |
| 473 |
2722 162 06291 |
VHF Narrow-BAND Circulators/Isolators, frequency range 201 to 209 MHz |
Philips |
| 474 |
2722 162 06331 |
ISOLATORS for P.C. Board Mounting, frequency range 2074 to 2184 MHz |
Philips |
| 475 |
2722 162 06901 |
VHF Narrow-BAND Circulators/Isolators, frequency range 200,5 to 207,5 MHz |
Philips |
| 476 |
2722 162 06911 |
VHF Narrow-BAND Circulators/Isolators, frequency range 208,5 to 215,5 MHz |
Philips |
| 477 |
28C256AJC-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 478 |
28C256AJI-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 479 |
28C256AJM-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 480 |
28C256APC-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
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