| No. |
Part Name |
Description |
Manufacturer |
| 511 |
29C021JI-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 512 |
29C021JM-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 513 |
29C021PC-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 514 |
29C021PI-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 515 |
29C021PM-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 516 |
29C021TC-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 517 |
29C021TI-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 518 |
29C021TM-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 519 |
2K0S-N005 |
Input voltage 200-260 VAC;output voltage 5 VDC;output current:270 A; 2.0 KW enclosed parallel power supply |
FranMar International |
| 520 |
2K0S-N012 |
Input voltage 200-260 VAC;output voltage 12 VDC;output current:167 A; 2.0 KW enclosed parallel power supply |
FranMar International |
| 521 |
2K0S-N015 |
Input voltage 200-260 VAC;output voltage 15 VDC;output current:134 A; 2.0 KW enclosed parallel power supply |
FranMar International |
| 522 |
2K0S-N024 |
Input voltage 200-260 VAC;output voltage 24 VDC;output current:83.5 A; 2.0 KW enclosed parallel power supply |
FranMar International |
| 523 |
2K0S-N048 |
Input voltage 200-260 VAC;output voltage 48 VDC;output current:42 A; 2.0 KW enclosed parallel power supply |
FranMar International |
| 524 |
2KBP02 |
Diode Rectifier Bridge Single 200V 2A 4-Pin D-44 |
New Jersey Semiconductor |
| 525 |
2KBP02M |
Diode Rectifier Bridge Single 200V 2A 4-Pin Case KBP |
New Jersey Semiconductor |
| 526 |
2N5441 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 527 |
2N5444 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 528 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 529 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 530 |
3B30L20 |
3A three phase rectifier bridge 200V |
Texas Instruments |
| 531 |
3B60L20 |
6A three phase rectifier bridge 200V |
Texas Instruments |
| 532 |
3EZ200D |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 533 |
3EZ200D1 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 534 |
3EZ200D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 1% tolerance. |
Motorola |
| 535 |
3EZ200D10 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 536 |
3EZ200D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 10% tolerance. |
Motorola |
| 537 |
3EZ200D2 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 538 |
3EZ200D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 2% tolerance. |
Motorola |
| 539 |
3EZ200D3 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 540 |
3EZ200D4 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
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