| No. |
Part Name |
Description |
Manufacturer |
| 4621 |
BD9E300EFJ-LB(H2) |
7.0V to 36V Input, 2.5A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 4622 |
BD9E300EFJ-LBE2 |
7.0V to 36V Input, 2.5A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 4623 |
BD9E300EFJ-LBH2 |
7.0V to 36V Input, 2.5A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 4624 |
BD9E301EFJ-LB(E2) |
7.0V to 36V Input, 2.5A Integrated MOSFETSingle Synchronous Buck DC/DC Converter |
ROHM |
| 4625 |
BD9E301EFJ-LB(H2) |
7.0V to 36V Input, 2.5A Integrated MOSFETSingle Synchronous Buck DC/DC Converter |
ROHM |
| 4626 |
BD9E301EFJ-LBE2 |
7.0V to 36V Input, 2.5A Integrated MOSFETSingle Synchronous Buck DC/DC Converter |
ROHM |
| 4627 |
BD9E301EFJ-LBH2 |
7.0V to 36V Input, 2.5A Integrated MOSFETSingle Synchronous Buck DC/DC Converter |
ROHM |
| 4628 |
BD9E302EFJ |
7.0V ～ 28V Input, 3A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 4629 |
BD9E302EFJ-E2 |
7.0V ～ 28V Input, 3A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 4630 |
BD9E303EFJ-LB(E2) |
7.0V to 36V Input, 3.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 4631 |
BD9E303EFJ-LB(H2) |
7.0V to 36V Input, 3.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 4632 |
BD9E303EFJ-LBE2 |
7.0V to 36V Input, 3.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 4633 |
BD9E303EFJ-LBH2 |
7.0V to 36V Input, 3.0A Integrated MOSFET Single Synchronous Buck DC/DC Converter |
ROHM |
| 4634 |
BD9G101G |
Step-down Switching Regulators with Built-in Power MOSFET |
ROHM |
| 4635 |
BD9G101G-TR |
Step-down Switching Regulators with Built-in Power MOSFET |
ROHM |
| 4636 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 4637 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 4638 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
| 4639 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
| 4640 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 4641 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 4642 |
BF1005SW |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 4643 |
BF1005W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 4644 |
BF1009 |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 4645 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 4646 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 4647 |
BF1009S |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 4648 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 4649 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 4650 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
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